Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yoon, Soon F"'
Publikováno v:
In Materials Science & Engineering B 2000 74(1):151-157
Autor:
Tanoto, Hendrix, Yoon, Soon F., Loke, Wan K., Fitzgerald, Eugene A., Dohrman, Carl, Narayanan, Balasubramanian, Tung, Chih H.
Publikováno v:
MRS Online Proceedings Library; 2005, Vol. 891 Issue 1, p1-6, 6p
Publikováno v:
Proceedings of SPIE; Nov2004, Issue 1, p24-29, 6p
Akademický článek
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Autor:
Yoon, Soon F., Hua, Kian, Khai, Wan, Wicaksono, Satrio, Luong, Kim, Khee, Tien, Xu, Zhe, Jager, Dieter, Tripon, Charlotte, and, Gupta
Publikováno v:
ECS Transactions; May 2009, Vol. 19 Issue: 3 p5-29, 25p
This report demonstrates a UV-embossed polymeric chip for protein separation and identification by Capillary Isoelectric Focusing (CIEF) and Matrix Assisted Laser Desportion/Ionization Mass Spectrometry (MALDI-MS). The polymeric chip has been fabrica
Externí odkaz:
http://hdl.handle.net/1721.1/7470
We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers i
Externí odkaz:
http://hdl.handle.net/1721.1/7466
Autor:
Wang, S.Z., Yoon, Soon Fatt
GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some r
Externí odkaz:
http://hdl.handle.net/1721.1/3906
Autor:
Wang, S.Z., Yoon, Soon Fatt
GaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing processes. The critical thickness is almost one order thicker than the theoretical prediction by force balance model. The growth process could be sped up by the ni
Externí odkaz:
http://hdl.handle.net/1721.1/3752
In this article, we report an attempt of extending the InGaAsN materials towards 1.3µm and 1.55µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SS-MBE) system. Our experiments revealed tha
Externí odkaz:
http://hdl.handle.net/1721.1/4034