Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Yool Kang"'
Autor:
Hyun Seok Choi1 tommychs@kaist.ac.kr, Sun Yool Kang1, Seong Jun Cho1, Inn-Yeal Oh1, Mincheol Shin1, Hyuncheol Park1, Chaun Jang2, Byoung-Chul Min2, Sang-Il Kim3, Seung-Young Park3, Chul Soon Park1
Publikováno v:
Scientific Reports. 7/4/2014, p1-7. 7p.
Publikováno v:
Japanese Journal of Applied Physics. 46:6135-6139
The double-patterning process was investigated for line-and-space (L/S) patterns of 65 nm half pitch [k1=0.286, 0.85-numerical aperture (NA) ArF dry system] by plasma treatment of photoresist (PR). The sequence of this patterning is exposure–plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ab05465fe7b15848ef20f5d8934d1d
https://doi.org/10.1143/jjap.46.6135
https://doi.org/10.1143/jjap.46.6135
Autor:
Inn Yeal Oh, Mincheol Shin, Seung-Young Park, Chul Soon Park, Sun Yool Kang, Seong Jun Cho, Sangil Kim, Byoung-Chul Min, Hyuncheol Park, Chaun Jang, Hyunseok Choi
Publikováno v:
SCIENTIFIC REPORTS(4)
Scientific Reports
Scientific Reports
Spin–torque nano–oscillators (STNOs) have outstanding advantages of a high degree of compactness, high–frequency tunability, and good compatibility with the standard complementary metal–oxide–semiconductor process, which offer prospects for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9e2482dcb1c96c9d8ef8a8b40ddc1a2
http://open-repository.kisti.re.kr/cube/handle/open_repository/485081.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/485081.do
Autor:
Joo-Tae Moon, Dong-Won Jung, Tsutomu Tanaka, Sung-Ho Lee, Yool Kang, Sook Lee, Hyun-Woo Kim, Joe Mattia, Timothy G. Adams, Sang-Jun Choi, George G. Barclay, Sang-Gyun Woo, Stefan J. Caporale, Doris Kang, George W. Orsula, Robert J. Kavanagh
Publikováno v:
Journal of Photopolymer Science and Technology. 14:363-371
ArF lithography, in combination with chemically amplified resists, has been investigated as one of the most promising technologies for producing patterns below 100nm. In considering the polymer matrix for 193nm photoresist applications, factors such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41847cad5b678807206fa83e102c0ca8
https://doi.org/10.2494/photopolymer.14.363
https://doi.org/10.2494/photopolymer.14.363
Publikováno v:
Journal of Photopolymer Science and Technology. 10:521-528
A new class of photoresist matrix polymer based on alicyclic cyclopolymer was developed for use in ArF single-layer lithography. A novel polymer was synthesized by terpolymerization reaction between tert-butyl methacrylate and alicyclic-malefic anhyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99324310e8d84e2158dc9cd603c9a89f
https://doi.org/10.2494/photopolymer.10.521
https://doi.org/10.2494/photopolymer.10.521
Autor:
Hyun-Jin Kim, Jae-Woo Lee, Yool Kang, Jae-Hyun Kim, Deog-Bae Kim, Jung-Yeol Lee, Geun-Jong Yu, Sang-Jeoung Kim
Publikováno v:
SPIE Proceedings.
As the feature size becomes smaller, it is difficult for the lithography progress to keep pace with the acceleration of design rule shrinkage and high integration of memory device. Extreme Ultra Violet Lithography (EUVL) is a preferred solution for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0c375e968642a028e0ca48c0c74f0e3
https://doi.org/10.1117/12.711951
https://doi.org/10.1117/12.711951
Autor:
Han-Ku Cho, Man-Hyoung Ryoo, Shi-Yong Lee, Yool Kang, Hyung-Rae Lee, Sang-Gyun Woo, Jin Hong, Joo-Tae Moon
Publikováno v:
SPIE Proceedings.
Bi-Layer Resist (BLR) process has been developed as an alternative method to overcome the limit of Single-Layer Resist lithography. Compared to other methods such as Single-Layer Resist (SLR) and Multi-Layer Resist (MLR), BLR has distinct advantages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a9e1cc5a3638a6eb5550a1c703835c5
https://doi.org/10.1117/12.599484
https://doi.org/10.1117/12.599484
Autor:
Jung-Hyeon Lee, Gi-Sung Yeo, Sung-Woo Lee, Yool Kang, Soo-Han Choi, Young-Mi Lee, Han-Ku Cho, Woo-Sung Han, Chang-min Park, Sang-Wook Kim
Publikováno v:
SPIE Proceedings.
Dummy contact generation procedure to apply off-axis illumination (OAI) to a contact layer in a 60 nm node device is described. The model based optical proximity correction (OPC) is also adopted to control the on-chip variation (OCV). The dummy conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::003b579c1330a7dfce0999e23b7a8f55
https://doi.org/10.1117/12.536268
https://doi.org/10.1117/12.536268
Autor:
Ju-Hyung Lee, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han, Yun-Sook Chae, Yool Kang, Hyun-woo Kim
Publikováno v:
Advances in Resist Technology and Processing XX.
ArF lithography has been successfully implemented for the development of sub-100nm DRAM devices. Such issues as CD (critical dimension) slimming during in-line SEM inspection and low dry etch resistance especially for SiN etch conditions, however, ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaf41312c64783f84526f19a25034174
https://doi.org/10.1117/12.485119
https://doi.org/10.1117/12.485119
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).
Flow process using a novel resist called the SMART (Samsung Advanced Resist for Thermal flow process) was studied. The SMART consisted of conventional polyhydroxy styrene-based polymers and the additives for cross-linking reactions with base polymers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b315c229dad917df09109076bc71a7c
https://doi.org/10.1109/imnc.2000.872640
https://doi.org/10.1109/imnc.2000.872640