Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yooichi Hirose"'
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 101:332-338
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea011a5cc1ba2d993ba7f6e926b91c7
https://doi.org/10.1541/ieejfms1972.101.332
https://doi.org/10.1541/ieejfms1972.101.332
Publikováno v:
Journal of Applied Physics. 47:3603-3608
350‐keV He+ backscattering analysis was applied to the investigation of Ag photoinduced diffusion into As2S3 glass and proved to be suitable for the present purposes. Silver atoms diffuse into As2S3 by photoirradiation (termed ’’photodoping’
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a309d36f5297d3331c7de224a26bcab6
https://doi.org/10.1063/1.323165
https://doi.org/10.1063/1.323165
Autor:
Yooichi Hirose, Haruo Hirose
Publikováno v:
Journal of Applied Physics. 47:2767-2772
High cyclical reproducibility in polarity‐dependent switching and memory function was obtained. Switching and memory effect seem to occur when both electrodes (Mo and Ag) are bridged by Ag dendrite which originates as the result of Ag photodoping.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e985ba1be4f2145f15cac0307396715
https://doi.org/10.1063/1.322942
https://doi.org/10.1063/1.322942
Publikováno v:
Electronics and Communications in Japan (Part I: Communications). 64:116-123
With Ag-photodoped amorphous As2S3 specimens that have nonvolatile memory effect, the electric conduction, temperature and frequency characteristics and thermoelectromotive force are investigated. The fabrication yield of this specimen is almost 100%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17608e2c5cf2c720bd6de6f23d06e77f
https://doi.org/10.1002/ecja.4410640215
https://doi.org/10.1002/ecja.4410640215
Autor:
Yooichi Hirose, Akio Kunioka
Publikováno v:
Journal of Applied Physics. 44:1706-1707
Threshold fields have been measured with respect to switching phenomena in thin films of the S–Se–Te systems. The measured threshold field Eth was found to vary as 1/d where d is the film thickness, ranging from 0.1 to 2 μm. The relationship obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::588a2eba98c2f1bac66af9ad024023a1
https://doi.org/10.1063/1.1662435
https://doi.org/10.1063/1.1662435