Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yoohwan Rho"'
Autor:
Jun-Ho Shin, Su-Jin Ahn, Yeong-Taek Lee, Han-Sung Joo, Jung Sunwoo, Jei-Hwan Yoo, Hoe-ju Chung, Yong-Jin Kwon, Jaehwan Kim, Beakhyoung Cho, Jae-Wook Lee, Chang-Soo Lee, Yong-Jun Lee, Mu-Hui Park, Gitae Jeong, Sang-Hoan Chang, Jin-Young Kim, Soehee Kim, Mingu Kang, Duckmin Kwon, Young-Hoon Oh, Kwang-Jin Lee, Qi Wang, Young-don Choi, Yoohwan Rho, Jae-Yun Lee, Ickhyun Song, Hideki Horii, Sooho Cha, Ki-Sung Kim
Publikováno v:
ISSCC
Phase-change random access memory (PRAM) is considered as one of the most promising candidates for future memories because of its good scalability and cost-effectiveness [1]. Besides implementations with standard interfaces like NOR flash or LPDDR2-N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f5ac863917e36ad25b5701fc52bcd26
https://doi.org/10.1109/isscc.2012.6176872
https://doi.org/10.1109/isscc.2012.6176872
Autor:
Sung-Hoon Kim, Yong-Jun Lee, Byung-Hoon Jeong, Sang-Tae Kim, Jung Sunwoo, HoGeun Cho, Jin-Young Kim, Sunghyun Jun, Inchul Shin, Hoe-ju Chung, Woo-Yeong Cho, Jae-Wook Lee, Woochul Jun, Jun-Ho Shin, Joon-Min Park, Chang-han Choi, Qi Wang, Young-don Choi, Young-Hyun Jun, Ki-whan Song, Byung-Jun Min, KiSeung Kim, Jei-Hwan Yoo, Mu-Hui Park, Yoohwan Rho, Won-Ryul Chung, Seok-Won Hwang, Sang-whan Chang, Ickhyun Song, Ki-won Lim, Beak-Hyung Cho, Kwang-Jin Lee, Sooho Cha, Jaewhan Kim, Duk-Min Kwon
Publikováno v:
ISSCC
In mobile systems, the demand for the energy saving continues to require a low power memory sub-system. During the last decade, the floating-gate flash memory has been an indispensable low power memory solution. However, NOR flash memory has begun to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f97aa243d95e0484bd2bb05761a837
https://doi.org/10.1109/isscc.2011.5746415
https://doi.org/10.1109/isscc.2011.5746415
Autor:
Hoeju Chung, Byung Hoon Jeong, ByungJun Min, Youngdon Choi, Beak-Hyung Cho, Junho Shin, Jinyoung Kim, Jung Sunwoo, Joon-min Park, Qi Wang, Yong-jun Lee, Sooho Cha, Dukmin Kwon, Sangtae Kim, Sunghoon Kim, Yoohwan Rho, Mu-Hui Park, Jaewhan Kim, Ickhyun Song, Sunghyun Jun
Publikováno v:
2011 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2011, p500-502, 3p