Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Yoo-Hyon Kim"'
Autor:
Kang Doosuk, Yoo-Hyon Kim, Young-Chul Shin, Tae Geun Kim, Yu-Sun Park, Byung-Uk Kim, Kyung-Rae Kim, Dooil Kim
Publikováno v:
Physica B: Condensed Matter. :610-613
To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e665027e13f9b0752656094dd20ecd9
https://doi.org/10.1016/j.physb.2005.12.154
https://doi.org/10.1016/j.physb.2005.12.154
Autor:
Jong-Won Lee, Yoo-Hyon Kim, James Word, Young-Seok Woo, Shady Abdelwahed, Juhwan Kim, Woon-Hyuk Choi, Beom-Seok Seo, Vladislav Liubich
Publikováno v:
SPIE Proceedings.
As the industry progresses toward smaller patterning nodes with tighter CD error budgets and narrower process windows, the ability to control pattern quality becomes a critical, yield-limiting factor. In addition, as the feature size of design layout
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d0febf572de07ff21f7da514c5e02e5
https://doi.org/10.1117/12.848447
https://doi.org/10.1117/12.848447
Autor:
Stewart A. Robertson, Woon-Hyuk Choi, Byung-Sung Kim, Mark D. Smith, Yoo-Hyon Kim, John J. Biafore
Publikováno v:
Optical Microlithography XXI.
If RET selection by simulation is to be successful for the deep sub-wavelength technologies of today, then the predictions of the simulator must be quantitatively accurate over the parameter space of interest. The Rigorous Physical resist Model (RPM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f05a08c3388f6ad931d3e5bed6e35ef4
https://doi.org/10.1117/12.772766
https://doi.org/10.1117/12.772766
Autor:
Dong-Hyun Kim, Soo-Han Choi, Moon-Hyun Yoo, Jeong-Taek Kong, Eun-Sung Kim, Yongchan Ban, A-Young Je, Dae-Youp Lee, Hyoung-Joo Youn, Yoo-Hyon Kim, Tae-Hoon Park, Ji-Suk Hong
Publikováno v:
Optical Microlithography XVIII.
The k1 factor of the 65nm node device approaches to around 0.3 or even below because the device shrinking is much faster than the development speed of the high NA ArF scanner. Since the conventional model-based OPC (MBOPC) is only focused on patterni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e2f44463fa7ad9b329bfe878567fc8
https://doi.org/10.1117/12.600249
https://doi.org/10.1117/12.600249
Autor:
Yongchan Ban, Soo-Han Choi, Moon-Hyun Yoo, Ji-Suk Hong, Dong-Hyun Kim, Ki-Hung Lee, Jeong-Taek Kong, Yoo-Hyon Kim
Publikováno v:
ISQED
The increase in pattern complexity due to optical proximity correction (OPC), the tight requirements for critical dimension (CD) control and the difficulties in defect inspections make IC manufacture more expensive. To alleviate the high cost, manufa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de95f1c649c7b1a98baac1f7dfbca5ed
https://doi.org/10.1109/isqed.2005.5
https://doi.org/10.1109/isqed.2005.5
Autor:
Ki-Heung Lee, Soo-Han Choi, Ji-Suk Hong, Moon-Hyun Yoo, Dong-Hyun Kim, Yongchan Ban, Yoo-Hyon Kim, Jeong-Taek Kong
Publikováno v:
SPIE Proceedings.
As the lithography process approaches to the low k1 regime, the layout designers are forced to design the litho-friendly layout, which considers the process margin and mask error enhancement factor (MEEF). In addition, the lithography engineers are a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89fc5ac4f748b4a30590e5ce5ed3f551
https://doi.org/10.1117/12.535008
https://doi.org/10.1117/12.535008
Autor:
Chul-Hong Park, Yoo-Hyon Kim, Soo-Han Choi, Yongchan Ban, Moon-Hyun Yoo, Jeong-Taek Kong, Dong-Hyun Kim, Ji-Suk Hong
Publikováno v:
SPIE Proceedings.
Sub-wavelength lithography has made the OPC (Optical Proximity Correction) technology one of the most precious commodities for the fabrication of semiconductor devices. Highly accurate gate CD (Critical Dimension) control and design rule shrinkage ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a167e765f048f66f062a42a97d4d6432
https://doi.org/10.1117/12.535027
https://doi.org/10.1117/12.535027
Autor:
Jeong-Taek Kong, Tae-Hwang Jang, Chul-Hong Park, Sang-Uhk Rhie, Dong-Hyun Kim, Yoo-Hyon Kim, Jun-Seong Park, Soo-Han Choi, Moon-Hyun Yoo, Ji-Soong Park
Publikováno v:
ISQED
The hybrid PPC (process proximity correction) has been one of the inevitable methods for the sub-wavelength lithography to satisfy the requirements of CD control and yield improvement. In this paper, an effective methodology for hybrid PPC is present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c46c8d280ace4f2eaf93e2617803a923
https://doi.org/10.1109/isqed.2002.996717
https://doi.org/10.1109/isqed.2002.996717
Publikováno v:
SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.
Recently, simulation of Chemical Mechanical Polishing (CMP) is becoming more important because planarity and uniformity which are dependent on many dynamic factors are difficult to control. In this paper, a profile simulation environment based on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75a84838e939ae55c6b124f3f592641b
https://doi.org/10.1109/sispad.1997.621338
https://doi.org/10.1109/sispad.1997.621338
Autor:
Kwang-Jae Yoo, Kyung-Hyun Kim, Jeong-Taek Kong, Bo-Yeon Yoon, Young-Kwan Park, Sang-Rok Ha, Yoo-Hyon Kim
Publikováno v:
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).
Simulation of chemical-mechanical polishing is important because the chip-level planarity and wafer-level uniformity dependent on many dynamic factors are difficult to control. CHAMPS (chemical mechanical planarization simulator) has been developed f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c7c9a85433aa4476e92ab0067c468c6
https://doi.org/10.1109/sispad.2000.871223
https://doi.org/10.1109/sispad.2000.871223