LEFM Analysis of V-Notched Aluminum Plates Using Higher-Order Layerwise Model

Autor: Hee Joong Kim, Kwang S. Woo, Yoo Mi Kwon, Dong Woo Lee

Publikováno v: Advanced Materials Research. 898:355-358

Higher-order layerwise model is proposed to determine stress intensity factors using virtual crack closure technique for V-notched plates. Present method is based on p-convergent approach and adopts the concept of subparametric element. In assumed di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2facebda41c0f8611e0c311c78845649
https://doi.org/10.4028/www.scientific.net/amr.898.355

First demonstration of heterojunction-free GaN nanochannel FinFETs

Autor: Yoo-Mi Kwon, Dong-Hyeok Son, Ki-Won Kim, Jae-Hoon Lee, Sang-Min Jeon, Dong-Seok Kim, Hee-Sung Kang, Ryun-Hwi Kim, Sorin Cristoloveanu, Jung-Hee Lee, Young-Woo Jo, Ki-Sik Im, Chul-Ho Won

Publikováno v: 25th International Symposium on Power Semiconductor Devices and ICs 2013 (ISPD 2013)
25th International Symposium on Power Semiconductor Devices and ICs 2013 (ISPD 2013), May 2013, Kanazawa, Japan. ⟨10.1109/ISPSD.2013.6694433⟩

Heavily doped GaN nanochannel FinFET has been proposed and fabricated, for the first time, which does not have any p-n junction or heterojunction. In spite of its easy and simple epitaxial growth and fabrication process, the fabricated device with na

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::185193a43e1f29444292be3b9e68d12d
https://doi.org/10.1109/ispsd.2013.6694433