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Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory.

Autor: Yoo S; Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea., Kang IM; School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea., Cho SJ; Department of Electronic Engineering, Gachon University, Gyeonggi-do 461-701, Korea., Sun W; Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea., Shin H; Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea.

Publikováno v: Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2021 Aug 01; Vol. 21 (8), pp. 4216-4222.