Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Yongwoo Jeon"'
Publikováno v:
Lipids in Health and Disease, Vol 17, Iss 1, Pp 1-6 (2018)
Abstract Background The triglyceride to high density lipoprotein cholesterol (TG/HDL-C) ratio associated with hypertension in adults. However, whether the TG/HDL-C ratio in adolescents predicts future hypertension remains unclear. Here, we evaluated
Externí odkaz:
https://doaj.org/article/34456ade20764e2fbb14851073c50d13
Publikováno v:
Journal of Preventive Medicine and Public Health, Vol 51, Iss 2, Pp 100-108 (2018)
Objectives Family members are often cancer patients’ primary source of social and emotional support and make a major contribution to how well patients manage their illness. We compared the prevalence of depression in the family members of cancer pa
Externí odkaz:
https://doaj.org/article/11d3ba1c0b7348a2aa0a25c2645ef59a
Publikováno v:
Journal of Preventive Medicine and Public Health, Vol 51, Iss 2, Pp 92-99 (2018)
Objectives Albuminuria has emerged as a biomarker for several medical conditions, and vitamin D has received attention due to its associations with various disorders. We evaluated the association between low serum vitamin D levels and prevalent album
Externí odkaz:
https://doaj.org/article/51c551f87a7242f385394ef90b8f21d7
Autor:
Dawon Jung, Dae Sin Kim, Kyu-ok Lee, Yongwoo Jeon, Yong-Don Kim, UiHui Kwon, Jaehyun Yoo, Kwangtae Kim, Oh-Kyum Kwon, Jeahyun Jung, Junhyuk Kim, Jisu Ryu
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
An automatic optimization methodology based on AI algorithm is proposed to achieve multi-targeting of various devices in 0.13 μm next BCD process development. The optimized process conditions are simultaneously provided with satisfying various ET-sp
Autor:
Jinwoo Kim, Ji-Seong Doh, Dae Sin Kim, Kang-Hyun Baek, Wonik Jang, Changwook Jeong, In Huh, Yoon-Suk Kim, Jisu Ryu, Jae-ho Kim, Yongwoo Jeon, Sanghoon Myung, Jaemin Kim, Songyi Han
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition an
Table S1. Reference value (sex-height-specific 95th percentile of blood pressures) for adolescent hypertension. Table S2. Baseline characteristics of the participants according to follow-up. Table S3. Multivariable logistic regression analysis for ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::106f8d637219e4a0ba5c9226fb502aaa
Autor:
Minkyung Bae, Yongsik Kim, Woojoon Kim, Jaehyeong Kim, Jaeman Jang, Dongsik Kong, Inseok Hur, Dong Myong Kim, Dae Hwan Kim, Hyun Kwang Jung, Yongwoo Jeon
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 11:153-161
In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a- IGZO) TFT inverter by using Verilog-A. As key physical parameter,
Autor:
Sunil Kim, Sungchul Kim, Yongsik Kim, Joo-Han Kim, Minkyung Bae, Dae Hwan Kim, Jun-Hyun Park, Inseok Hur, Sei Yong Park, Dongsik Kong, Je-Hun Lee, Jae Chul Park, Jaehyeong Kim, Yongwoo Jeon, Chang-Jung Kim, Dong Myong Kim, Jae-Woo Park, Woojoon Kim, Hyunkwang Jung, Byung Du Ahn
Publikováno v:
SID Symposium Digest of Technical Papers. 42:1227-1230
Analytical current and capacitance models for amorphous Indium-Gallium-Zinc-Oxide Thin film transistors (a-IGZO TFTs) are proposed for application to the simulation of a-IGZO TFT-based circuits. The accuracy of the proposed models are verified by com
Autor:
Minkyung Bae, Woojoon Kim, Jun-Hyun Park, Jae-Woo Park, Sei Yong Park, Hyungkwang Jung, Je-Hun Lee, Sungchul Kim, Inseok Hur, Byung Du Ahn, Yongwoo Jeon, Dae Hwan Kim, Joo-Han Kim, Jaehyeong Kim, Dong Myong Kim, Jaemam Jang, Dongsik Kong, Yongsik Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 42:1223-1226
The effect of the active layer thickness (TIGZO) on the constant current stress (CCS)-induced threshold voltage shift (ΔVT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) for AMOLED drivers is investigated by using a subgap density-of-st
Publikováno v:
Thin Solid Films. 519:4347-4350
The highly-doped buried layer (carrier concentration of ~ 1019 cm− 3) in an amorphous indium–gallium–zinc oxide (a-IGZO) channel layer of thin film transistor (TFT) led to dramatic improvements in the performance and prolonged bias-stability wi