Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yongte Wang"'
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-9 (2019)
Abstract In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (
Externí odkaz:
https://doaj.org/article/291dac2c8c41427fb3f746dc24e87f46
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Abstract La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid therma
Externí odkaz:
https://doaj.org/article/17d5605980d8492095d8c1e827ad6295
Publikováno v:
Nanomaterials, Vol 9, Iss 5, p 697 (2019)
Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La2O3 passivation layer deposition cycles improves the surface
Externí odkaz:
https://doaj.org/article/2deac4d090d14e36811e8d888418845e
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-9 (2019)
Nanoscale Research Letters
Nanoscale Research Letters
In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (Cu/LaAlO3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90865ca55f071d48542ffc7d0ad9d7e1
http://link.springer.com/article/10.1186/s11671-019-3064-1
http://link.springer.com/article/10.1186/s11671-019-3064-1
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:12577-12583
Resistive random access memory (RRAM) devices were designed using Al2O3/La2O3/Al2O3 multi-stacked films grown by atomic layer deposition as functional layers. The impact of Al+ ions implantation on the resistive switching performances of the RRAM dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abd1ed8ae3ed9837ce59e8c49d7c7519
https://doi.org/10.1007/s10854-019-01618-0
https://doi.org/10.1007/s10854-019-01618-0
Publikováno v:
Materials Science in Semiconductor Processing. 90:50-53
In this paper, the influence of a remote interfacial layer (IL) scavenging method on the interfacial characteristics of LaAlO3 grown by atomic layer deposition (ALD) on Si substrates has been studied. After the fabrication of Pt/LaAlO3/Si and Pt/Ti/T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d998e32be7104c61c317afe6350e969
https://doi.org/10.1016/j.mssp.2018.10.001
https://doi.org/10.1016/j.mssp.2018.10.001
Publikováno v:
Materials, Vol 11, Iss 11, p 2333 (2018)
Materials
Materials
In this paper, the impact of La2O3 passivation layers on the interfacial properties of Ge-based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that the formation of a thermodynamically stable LaGeOx component by incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad88b2b0803ec665de230366e8642895
https://www.mdpi.com/1996-1944/11/11/2333
https://www.mdpi.com/1996-1944/11/11/2333
Publikováno v:
Materials, Vol 11, Iss 9, p 1601 (2018)
Materials
Materials
The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of LaxAlyO films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of LaxAlyO films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74d0b6657a8e7d71510e785f3b6972e5
http://www.mdpi.com/1996-1944/11/9/1601
http://www.mdpi.com/1996-1944/11/9/1601
Publikováno v:
Materials, Vol 10, Iss 8, p 856 (2017)
Materials; Volume 10; Issue 8; Pages: 856
Materials; Volume 10; Issue 8; Pages: 856
Amorphous LaxAlyO films were grown on n-type Ge substrate by atomic layer deposition using O3 and H2O as oxidant, respectively. A comparison of the XPS results indicated that a thicker interfacial layer with the component of LaGeOx and GeOx was forme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7aef1b6294dcdcb1fdf6f7731bbb370
https://www.mdpi.com/1996-1944/10/8/856
https://www.mdpi.com/1996-1944/10/8/856
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal anneali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::234d6dbd93bcef3a0e03f23a029e8dc0
https://doi.org/10.1186/s11671-017-2018-8
https://doi.org/10.1186/s11671-017-2018-8