Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Yongsup, Park"'
Autor:
Kwangmo Yang, Doyoun Kwon, Sungho Nam, Joonghyuk Kim, Yeon Sook Chung, Hyunjoon Yoo, Insung Park, Yongsup Park, Ji Whan Kim, Jaesang Lee
Publikováno v:
Physical Review X, Vol 14, Iss 4, p 041009 (2024)
In organic light-emitting diodes (OLEDs), understanding the efficiency loss mechanism known as exciton-polaron quenching (EPQ) has been a longstanding challenge. Traditionally, EPQ was believed to occur mainly within the bulk of the OLED emission lay
Externí odkaz:
https://doaj.org/article/c16d3c3acc3242a8ae798fac9d7fffa1
Publikováno v:
Nanomaterials, Vol 13, Iss 16, p 2344 (2023)
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarka
Externí odkaz:
https://doaj.org/article/0b9b6d37353c479aac7ce5aa3ab778e6
Autor:
Tae Yeon Kim, Sungho Park, Byung Jun Kim, Su Been Heo, Jong Hun Yu, Jae Seung Shin, Jong-Am Hong, Beom-Su Kim, Young Duck Kim, Yongsup Park, Seong Jun Kang
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract Dual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of p
Externí odkaz:
https://doaj.org/article/b48c0ef7fbec405cade66cd5f3914c39
Autor:
Jun Hyung Jeong, Min Gye Kim, Jin Hyun Ma, Min Ho Park, Hyoun Ji Ha, Seong Jae Kang, Min-Jae Maeng, Young Duck Kim, Yongsup Park, Seong Jun Kang
Publikováno v:
Materials, Vol 15, Iss 24, p 8977 (2022)
One of the major obstacles in the way of high−performance quantum dot light−emitting diodes (QLEDs) is the charge imbalance arising from more efficient electron injection into the emission layer than the hole injection. In previous studies, a bal
Externí odkaz:
https://doaj.org/article/95894e2086a34a69b6612f4f50095065
Autor:
Jeonghun Kang, Jeong Hyuk Lee, Han-Koo Lee, Kwang-Tak Kim, Jin Hyeok Kim, Min-Jae Maeng, Jong-Am Hong, Yongsup Park, Kee Hoon Kim
Publikováno v:
Materials, Vol 15, Iss 7, p 2417 (2022)
In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their role i
Externí odkaz:
https://doaj.org/article/1dc2bbbc877a4c84891fbe84626de589
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c3ddfbaa83cd80a7fe32ce07794f8e5
https://doi.org/10.1103/physrevb.107.165204
https://doi.org/10.1103/physrevb.107.165204
Publikováno v:
SID Symposium Digest of Technical Papers. 53:512-514
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c78e5e3649eb902204923f1994fc4b9e
https://doi.org/10.1002/sdtp.16007
https://doi.org/10.1002/sdtp.16007
Autor:
Min Gye Kim, Jae Seung Shin, Jin Hyun Ma, Jun Hyung Jeong, Dong Hee Han, Beom-Su Kim, Woojin Jeon, Yongsup Park, Seong Jun Kang
Publikováno v:
Journal of Materials Chemistry C. 10:7294-7303
Al-doped TiO2 (ATO) interfacial layer improves the charge balance and the performance of quantum-dot light-emitting diodes (QLEDs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2beebb8b7eb4708525e743dd84c40270
https://doi.org/10.1039/d2tc00678b
https://doi.org/10.1039/d2tc00678b
Autor:
Jun Hyung, Jeong, Min Gye, Kim, Jin Hyun, Ma, Min Ho, Park, Hyoun Ji, Ha, Seong Jae, Kang, Min-Jae, Maeng, Young Duck, Kim, Yongsup, Park, Seong Jun, Kang
Publikováno v:
Materials (Basel, Switzerland). 15(24)
One of the major obstacles in the way of high-performance quantum dot light-emitting diodes (QLEDs) is the charge imbalance arising from more efficient electron injection into the emission layer than the hole injection. In previous studies, a balance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::58e858902d7a74b4402cf0ec1738e714
https://pubmed.ncbi.nlm.nih.gov/36556781
https://pubmed.ncbi.nlm.nih.gov/36556781
Autor:
Seong Jun Kang, Beom-Su Kim, Yongsup Park, Jae Seung Shin, Woon Ho Jung, Tae Yeon Kim, Su Been Heo, Sungho Park, Hyun-Jun Kim, Byung Doo Chin, Jong Am Hong, Jong Gyu Kim
Publikováno v:
Current Applied Physics. 29:107-113
A ZnMgO and ZnO double-layered structure was prepared to create a stepwise interfacial electronic structure to improve the electron-injection and electron-transport behaviors in quantum-dot light-emitting diodes (QLEDs). The current density of the el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb20307ec515b3296227ee3f83b43f75
https://doi.org/10.1016/j.cap.2021.07.001
https://doi.org/10.1016/j.cap.2021.07.001