Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yongsu Kwak"'
Autor:
Duhyuk Kwon, Yongsu Kwak, Doopyo Lee, Wonkeun Jo, Byeong-Gwan Cho, Tae-Yeong Koo, Jonghyun Song
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-8 (2023)
Abstract We synthesized a CaZrO3/SrTiO3 oxide heterostructure, which can serve as an alternative to LaAlO3/SrTiO3, and confirmed the generation of 2-dimensional electron gas (2-DEG) at the heterointerface. We analyzed the electrical-transport propert
Externí odkaz:
https://doaj.org/article/5b52acfe12014df2867171ea2f4b149d
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract For two-dimensional electron gas device applications, it is important to understand how electrical-transport properties are controlled by gate voltage. Here, we report gate voltage-controllable hysteresis in the resistance–temperature char
Externí odkaz:
https://doaj.org/article/aa39faa4753d48b3a2abf4f3f11975c0
Publikováno v:
Journal of Magnetics. 26:141-145
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b7b7a8fe2a3e3a09dc71341f06d7cc7
https://doi.org/10.4283/jmag.2021.26.2.141
https://doi.org/10.4283/jmag.2021.26.2.141
Publikováno v:
Journal of the Korean Magnetics Society. 30:8-12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fea2cec528a60d780a33efb58d4bc86
https://doi.org/10.4283/jkms.2020.30.1.008
https://doi.org/10.4283/jkms.2020.30.1.008
Publikováno v:
Scientific reports. 12(1)
For two-dimensional electron gas device applications, it is important to understand how electrical-transport properties are controlled by gate voltage. Here, we report gate voltage-controllable hysteresis in the resistance-temperature characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1e408c9d7458b586b5af2b938a3ad20d
https://pubmed.ncbi.nlm.nih.gov/35440752
https://pubmed.ncbi.nlm.nih.gov/35440752
Publikováno v:
Journal of the Korean Physical Society. 72:925-929
A top gate field effect transistor was fabricated using polymethyl methacrylate (PMMA) as a gate insulator on a LaAlO3 (LAO)/SrTiO3 (STO) hetero-interface. It showed n-type behavior, and a depletion mode was observed at low temperature. The electroni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d96b165bd880906e13f35c04974e2d8f
https://doi.org/10.3938/jkps.72.925
https://doi.org/10.3938/jkps.72.925
Autor:
Yong-Joo Doh, Dorj Odkhuu, Young Heon Kim, Sonny H. Rhim, Woojoo Han, Jonghyun Song, Thach D. N. Ngo, Mahn Soo Choi, Yongsu Kwak, Joon Sung Lee, Jinhee Kim
Publikováno v:
Applied Surface Science. 565:150495
As a quest for two-dimensional conducting interface with exotic functionalities for future electronic devices, the perovskite heterointerface of LaAlO3/SrTiO3 (LAO/STO) has been intensively studied. For the LAO/STO heterostructure, the critical thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d029915562a54fb44af0b2f7e50951e8
https://doi.org/10.1016/j.apsusc.2021.150495
https://doi.org/10.1016/j.apsusc.2021.150495
Publikováno v:
Solid-State Electronics. 129:16-21
We coated inorganic layer containing oxygen, aluminium, phosphorus, and negligible sodium (APO) on stainless steel (STS) by using slot-die coating method and studied its application prospects as a substrate for flexible devices. The APO layer was com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c034525dab173b0a8aaf2a11f90bb583
https://doi.org/10.1016/j.sse.2016.12.007
https://doi.org/10.1016/j.sse.2016.12.007
Publikováno v:
Journal of the Korean Physical Society. 69:263-267
We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature (T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac19056d4102cb8f070cd75aaf7c247
https://doi.org/10.3938/jkps.69.263
https://doi.org/10.3938/jkps.69.263
