Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Yongsik Moon"'
Autor:
Tse Nga Ng, Rene A. Lujan, Taegweon Lee, Sungseo Cho, Sangbok Kim, Matthew Smith, Yongsik Moon, Inyoung Son, Robert A. Street
Publikováno v:
ACS Applied Materials & Interfaces. 6:4428-4437
Thin film transistors (TFTs) fabricated by solution processing of sol-gel oxide semiconductor precursors in the group In-Ga-Zn are described. The TFT mobility varies over a wide range depending on the precursor materials, the composition, and the pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae34b66fc6ea3cf584d935b1263b93fc
https://doi.org/10.1021/am500126b
https://doi.org/10.1021/am500126b
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:P310-P314
In this study, the effects of pad temperature on the chemical mechanical polishing (CMP) of tungsten were investigated. During polishing, the pad temperature was monitored and the removal rate behavior with respect to the pad temperature evolution wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bece0f732179563b50f77ad19344a8dc
https://doi.org/10.1149/2.0071410jss
https://doi.org/10.1149/2.0071410jss
Autor:
Jie Chen, Laertis Economikos, Lindsey H. Hall, Haoren Zhuang, Jin Z. Wallner, Jay W. Strane, Walter Kleemeier, J. Sudijono, Paul Ferreira, Connie Truong, Cindy Goldberg, Xiaomeng Chen, Ron Sampson, Yongsik Moon, Rajasekhar Venigalla, Changyong Xiao, John H. Zhang, Derek C. Stoll
Publikováno v:
MRS Proceedings. 1335
Chemical Mechanical Polish (CMP) is one of the key technologies for the development of modern high performance integrated circuits. The requirements for the CMP uniformity get extremely demanding in order to meet the litho requirements for 32nm techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a77b56537d794a972246b39feda9f5d
https://doi.org/10.1557/opl.2011.854
https://doi.org/10.1557/opl.2011.854
Autor:
Laertis Economikos, Changan Wang, Eden Zielinski, Mark Kelling, Yongsik Moon, Wei-Tsu Tseng, Jihong Choi, Yayi Wei
Publikováno v:
MRS Proceedings. 1249
This study discusses topography specifications for 22 nm and beyond CMP process and presents recent experimental data. We evaluated local topography impact on CD development in the subsequent layer using specially designed 22-nm test patterns. A wide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87cdcfa913d4e6fe38260a040e67aaaf
https://doi.org/10.1557/proc-1249-e01-04
https://doi.org/10.1557/proc-1249-e01-04
Autor:
Zhibin Ren, Josephine B. Chang, Munir D. Naeem, Judson R. Holt, Omer H. Dokumaci, Qingyun Yang, Kevin K. Chan, Arvind Kumar, John King, Xinlin Wang, John Yates, Cindy Wang, Jin Cho, Thomas S. Kanarsky, C. Ouyang, Andreas Bryant, Yongsik Moon, Ying Zhang, Andreas Gehring, Dae-Gyu Park, Marwan H. Khater, Michael A. Guillorn, Chung-Hsun Lin, Wilfried Haensch, Amlan Majumdar, Xi Li
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
The intrinsic FinFET device structure can provide an estimated 10–20% reduction in delay relative to planar FETs at the 22nm technology node due to superior electrostatics. However, FinFETs are more prone to parasitic resistance and capacitance due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d19c2b2f90f4ab0e9e73331d3d4c0c1b
https://doi.org/10.1109/vtsa.2009.5159323
https://doi.org/10.1109/vtsa.2009.5159323
Autor:
David H. Mai, Yufei Chen, Rajeev Bajaj, Fritz Redeker, Yuchun Wang, Kapila Wijekoon, Yongsik Moon
Publikováno v:
MRS Proceedings. 671
Summary:This paper describes CMP challenges in development of copper-low k process technology. As copper/oxide or copper/FSG backend schemes are being implemented successfully in early manufacturing, development focus has shifted to Cu/OSG (organo-si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0097665da288dd911905ef420ef1431
https://doi.org/10.1557/proc-671-m7.3
https://doi.org/10.1557/proc-671-m7.3
Publikováno v:
ECS Journal of Solid State Science & Technology; 2014, Vol. 3 Issue 10, pP310-P314, 5p
Autor:
Wang, C., Chang, J., Chung-Hsun Lin, Kumar, A., Gehring, A., Jin Cho, Majumdar, A., Bryant, A., Zhibin Ren, Chan, K., Kanarsky, T., Xinlin Wang, Dokumaci, O., Guillorn, M., Khater, M., Qingyun Yang, Xi Li, Naeem, M., Holt, J., Yongsik Moon
Publikováno v:
2009 International Symposium on VLSI Technology, Systems & Applications; 2009, p127-128, 2p
Conference
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