Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Yongning Sheng"'
Autor:
Zhengyu Chen, Dawei Huang, Mingran Wang, Bowen Yang, Jinuk Luke Shin, Changran Hu, Bo Li, Raghu Prabhakar, Gao Deng, Yongning Sheng, Sihua Fu, Lu Yuan, Tian Zhao, Yun Du, Chen Liu, Jun Yang, Viren Shah, Venkat Srinivasan, Sumti Jairath
Publikováno v:
2023 IEEE Custom Integrated Circuits Conference (CICC).
Autor:
Murali Emani, Zhen Xie, Siddhisanket Raskar, Varuni Sastry, William Arnold, Bruce Wilson, Rajeev Thakur, Venkatram Vishwanath, Zhengchun Liu, Michael E. Papka, Cindy Orozco Bohorquez, Rick Weisner, Karen Li, Yongning Sheng, Yun Du, Jian Zhang, Alexander Tsyplikhin, Gurdaman Khaira, Jeremy Fowers, Ramakrishnan Sivakumar, Victoria Godsoe, Adrian Macias, Chetan Tekur, Matthew Boyd
Publikováno v:
2022 IEEE/ACM International Workshop on Performance Modeling, Benchmarking and Simulation of High Performance Computer Systems (PMBS).
Autor:
King C. Yen, Aparna Ramachandran, Timothy P. Johnson, Yongning Sheng, Jason M. Hart, Daisy Jian, Rakesh Mehta, Yuefei Ge, Dawei Huang, Lance Kwong, Hoyeol Cho, Zuxu Qin, Changku Hwang, Jinuk Luke Shin, Umesh Gajanan Nawathe, Robert P. Masleid, Venkat Krishnaswamy, Georgios Konstadinidis, Hari Sathianathan, Gregory Gruber, Sebastian Turullols
Publikováno v:
ISSCC
The 3.6 GHz SPARC T5 processor is Oracle's next generation CMT SoC processor implemented in TSMC's 28 nm process with 1.5 billion transistors. Significant performance improvements were made by doubling the previous generations number of cores to 16 a
Publikováno v:
Journal of Physics and Chemistry of Solids. 64:339-342
The growth mechanism of SiC film produced by pyrolysis polyimide LB film was discussed. AES result showed that the atoms of C and Si form a gradient distribution in the pyrolyzed SiC films. Parameters including the diffusion co-efficiency of carbon a
Autor:
J. Hart, S. Butler, null Hoyeol Cho, null Yuefei Ge, G. Gruber, null Dawei Huang, null Changku Hwang, D. Jian, T. Johnson, G. Konstadinidis, L. Kwong, R. Masleid, U. Nawathe, A. Ramachandran, null Yongning Sheng, J. L. Shin, S. Turullois, null Zuxu Qin, null King Yen
Publikováno v:
2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
Publikováno v:
Applied Physics Letters. 76:724-726
We report an in situ study of the molecular-beam epitaxy growth and annealing of Cu(001) films grown on hydrogen-terminated Si(001) substrates, resulting in a promising approach to achieve smooth epitaxial morphology. Using correlated reflection high
Publikováno v:
Applied Physics Letters. 75:1941-1943
Epitaxial growth techniques are used to impose in-plane magnetocrystalline anisotropy on a spin-polarized tunneling configuration. A Cu(100) buffer layer grown on a Si(100) substrate stabilizes epitaxial face-centered-cubic cobalt as one of the ferro
Autor:
Lowell E. Wenger, Roy Clarke, Yongning Sheng, Ladislav Pust, Yonghua Wang, Ctirad Uher, Rosa A. Lukaszew, Dmitri Litvinov
Publikováno v:
Journal of Applied Physics. 85:5765-5767
The magnetic properties of multilayer structures with two magnetic layers of the same metal (Co) but with different crystallographic structures separated by an insulating BN layer have been studied. These structures were prepared on Si (001) substrat
Autor:
Yongning Sheng, Xiaochun Gao
Publikováno v:
Research Disclosure; Jul2009, Issue 543, p770-772, 3p, 3 Diagrams