Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Yongkyoo Choi"'
Autor:
J. H. Oh, D. Y. Mun, S. Umehara, H. W. Yoo, Fumihiko Fukunaga, T. H. Kim, Yongkyoo Choi, Mari Nozoe, G. Kwon
Publikováno v:
SPIE Proceedings.
As the pattern size shrinkage, it becomes more important to control the critical size of various pattern shapes at a semiconductor production line. Recently, in a semiconductor process with 20 nm nodes size or less the common optical and even EB insp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e6c236f78e4cc0bf88257b8a47ff34
https://doi.org/10.1117/12.916244
https://doi.org/10.1117/12.916244
Autor:
Munsik Kim, Byoung-Ho Nam, Donggyu Yim, Yoonsuk Hyun, Changreol Kim, Byoung-Sub Nam, Yongdae Kim, Cheol-Kyun Kim, Yongkyoo Choi, Suk-Kyun Kim, James Moon, Chang-Moon Lim
Publikováno v:
Alternative Lithographic Technologies.
One of the major issues introduced by development of Extreme Ultra Violet Lithography (EUV) is high level of flare and shadowing introduced by the system. Effect of the high level flare degrades the aerial images and may introduce unbalanced Critical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b77fb627922faf287c56c9ad2f38c7b0
https://doi.org/10.1117/12.814364
https://doi.org/10.1117/12.814364
Publikováno v:
Photomask Technology 2008.
As design rule of memory device is smaller and smaller, the CD uniformity of a photomask become the most important factor to satisfy wafer exposure performance. Once the photomask is made, CD uniformity of the mask can't be changed and if CD uniformi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7bbdab19e526fb9651d6a1f9bb216cf
https://doi.org/10.1117/12.801432
https://doi.org/10.1117/12.801432
Publikováno v:
SPIE Proceedings.
Haze formation on reticle continues to be a significant source of concern for the photolithography. Possible sources and causes continue to be investigated. This paper provides a haze source evaluation result under the sub-pellicle defect on the mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d584705cfcbd5fbeabf85fe1b5803a
https://doi.org/10.1117/12.793085
https://doi.org/10.1117/12.793085
Publikováno v:
SPIE Proceedings.
As design rule of memory device is shrinking, the various errors obtained by process, such as line edge roughness, local CD variation and electron beam shot placement error, are significant to CD measurement results on mask and wafer. Reliable CD mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d04a96427a79745c740f14d11a1faa6e
https://doi.org/10.1117/12.793065
https://doi.org/10.1117/12.793065
Publikováno v:
SPIE Proceedings.
As the semiconductor industry requires lithography suitable for 32-nm node, extreme ultraviolet lithography (EUVL) has the potential to provide this capability for the mass fabrication of semiconductor devices. But because an extreme ultraviolet (EUV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f5022d8ceeb58107645bb65a277f05
https://doi.org/10.1117/12.799668
https://doi.org/10.1117/12.799668
Publikováno v:
SPIE Proceedings.
A new inspection system with DUV laser beam and high NA optic for EUV mask has been developed to inspect defects on EUV blank mask and defects by process and handling. The development of new reflective image and optics has increased inspection speed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45885ef368be7655fdb9be02568f4383
https://doi.org/10.1117/12.773145
https://doi.org/10.1117/12.773145
Publikováno v:
SPIE Proceedings.
Sensitivity of newly developed photo mask inspection tool with reflective optic was evaluated for 45nm DRAM device. To get the required defect sensitivity of mask, printability of mask defect on wafer were simulated using in house simulation tool. Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9d30dbb21511655f80c935cba7f2bbf
https://doi.org/10.1117/12.746864
https://doi.org/10.1117/12.746864
Publikováno v:
SPIE Proceedings.
As device pattern size is shrinking to below 65nm on wafer, the small amount of CD variation on wafer field determine the wafer yield. Most of the wafer field CD variations come from mask CD variations across mask field. By correction of dose and tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc994eeff1fe430082faabfbb7216bbe
https://doi.org/10.1117/12.746846
https://doi.org/10.1117/12.746846
Publikováno v:
SPIE Proceedings.
As pattern size is shrinking, required mask CD specification is tighter and its effect on wafer patterning is more severe. To enhance the device performance, wafer CD uniformity should be enhanced and controlled by mask global CD uniformity. Mask glo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5457a7f1d75beae9153c647bc6ef3bf5
https://doi.org/10.1117/12.728979
https://doi.org/10.1117/12.728979