Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Yongkang Han"'
Autor:
Donglin Zhang, Honghu Yang, Yue Cao, Zhongze Han, Yixuan Liu, Qiqiao Wu, Yongkang Han, Haijun Jiang, Jianguo Yang
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1851 (2023)
Hafnium-based ferroelectric memories are a promising approach to enhancing integrated circuit performance, offering advantages such as miniaturization, compatibility with CMOS technology, fast read and write speeds, non-volatility, and low power cons
Externí odkaz:
https://doaj.org/article/0c37c7a64f714ae69d9d2de1b3408e64
Publikováno v:
Batteries, Vol 9, Iss 5, p 283 (2023)
Lithium metal is one of the most attractive anode materials for rechargeable batteries. However, its high reactivity with electrolytes, huge volume change, and dendrite growth upon charge or discharge lead to a low CE and the cycle instability of bat
Externí odkaz:
https://doaj.org/article/0af74ceb4c3447bdaecf2c4fabf2e729
Autor:
Yixuan Liu, Qiao Hu, Qiqiao Wu, Xuanzhi Liu, Yulin Zhao, Donglin Zhang, Zhongze Han, Jinhui Cheng, Qingting Ding, Yongkang Han, Bo Peng, Haijun Jiang, Xiaoyong Xue, Hangbing Lv, Jianguo Yang
Publikováno v:
Micromachines, Vol 13, Iss 6, p 924 (2022)
Probabilistic computing is an emerging computational paradigm that uses probabilistic circuits to efficiently solve optimization problems such as invertible logic, where traditional digital computations are difficult to solve. This paper proposes a t
Externí odkaz:
https://doaj.org/article/ef27bd59c27a48088ddd7cde16ef412d
Autor:
Donglin Zhang, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han, Honghu Yang, Jinhui Cheng, Qingting Ding, Haijun Jiang, Jianguo Yang, Hangbing Lv
Publikováno v:
Micromachines, Vol 12, Iss 8, p 913 (2021)
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. Howeve
Externí odkaz:
https://doaj.org/article/0791061855f14b41b4be7315658220b4
Autor:
Yi Li, Jia Chen, Linfang Wang, Woyu Zhang, Zeyu Guo, Jun Wang, Yongkang Han, Zhi Li, Fei Wang, Chunmeng Dou, Xiaoxin Xu, Jianguo Yang, Zhongrui Wang, Dashan Shang
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 70:1871-1875
Autor:
Yike Lei, Yuval Elias, Yongkang Han, Dongdong Xiao, Jun Lu, Jie Ni, Yingchuan Zhang, Cunman Zhang, Doron Aurbach, Qiangfeng Xiao
Publikováno v:
ACS Applied Materials & Interfaces. 14:49709-49718
Li-rich Mn-based layered oxide cathodes with a high discharge capacity hold great promise for high energy density lithium-ion batteries. However, application is hampered by voltage and capacity decay and gas evolution during cycling due to interfacia
Publikováno v:
IEEE Sensors Journal. 22:13864-13871
Autor:
Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming LiU
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Autor:
Jinhui Cheng, Xuanzhi Liu, Yue Cao, Wenjun Zhang, Zhongze Han, Bo Peng, Yixuan Liu, Donglin Zhang, Yongkang Han, Xiaoxin Xu, Jianguo Yang
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Publikováno v:
Journal of Quantitative Spectroscopy and Radiative Transfer. 302:108555