Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Yongjun Huo"'
Autor:
Xuefeng Wu, Zhuangzhuang Hou, Xiaochen Xie, Pengrong Lin, Yongjun Huo, Yong Wang, Xiuchen Zhao
Publikováno v:
Journal of Materials Research and Technology, Vol 31, Iss , Pp 3226-3237 (2024)
Sn–Bi based solders are used in electronic packaging for interconnection processes. However, the rate of research on the comprehensive performance of solders is difficult to match the rapid development of advanced manufacturing of integrated circui
Externí odkaz:
https://doaj.org/article/095b48111e8149da8e7c1b9afee69734
Autor:
Shuang Zhao, Bing Zheng, Donglin Zhang, Xiaochen Xie, Zhibo Qu, Yong Wang, Xiuchen Zhao, Chin C. Lee, Yongjun Huo
Publikováno v:
Journal of Materials Research and Technology, Vol 30, Iss , Pp 4600-4611 (2024)
Ag-based solid solutions have gained significant attention in the electronic packaging field due to their remarkable plasticity. In this work, the generalized planar fault energy (GPFE), critical strength and stresses, and electronic properties after
Externí odkaz:
https://doaj.org/article/611aec59c6bf4edca8efe873f4b99db7
Autor:
Xuefeng Wu, Zhuangzhuang Hou, Xiaochen Xie, Pengrong Lin, Yongjun Huo, Yong Wang, Xiuchen Zhao
Publikováno v:
Journal of Materials Research and Technology, Vol 26, Iss , Pp 1382-1396 (2023)
Severe atomic migration occurs in the solder under the effect of multi-physics field coupling, leading to serious reliability problems. Under the influence of multi-physics field coupling, severe atomic migration occurs in solder, resulting in signif
Externí odkaz:
https://doaj.org/article/21c61c269ded4ecfa46a8ce9758ac70e
Publikováno v:
Journal of Materials Research and Technology, Vol 25, Iss , Pp 999-1010 (2023)
Developing ultra-high-density interconnects using current technologies presents certain limitations. It is because traditional solder joint technology employs a liquid-solid interfacial reaction process that makes it difficult to control the shape of
Externí odkaz:
https://doaj.org/article/4b35eff56fd44c45aed44a059a6d7d15
Publikováno v:
International Journal for Equity in Health, Vol 22, Iss 1, Pp 1-9 (2023)
Abstract Background In China, Community Health Centers (CHCs) provide primary healthcare (PHC); however, few studies have examined the quality of PHC services experienced by migrant patients. We examined the potential association between the quality
Externí odkaz:
https://doaj.org/article/f5ccebb827f54a24938731631451b5b8
Autor:
Shuang Zhao, Bing Zheng, Donglin Zhang, Xiaochen Xie, Zhibo Qu, Yong Wang, Xiuchen Zhao, Jiaqi Wu, Chin C. Lee, Yongjun Huo
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 6065-6075 (2023)
Silver-indium solid solution is the key material in advancing low-temperature/pressure solid-state technology for electronics packaging, due to its rare solid solution softening (SSS) phenomenon. In this work, the critical resolved shear stress (CRSS
Externí odkaz:
https://doaj.org/article/558058b43d9f4b448565f2e856c6158b
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 71-80 (2023)
The influence of uniformity and small size solder particles on microstructure evolution and mechanical performances of low temperature soldering joints was investigated. First, experiments were set up to obtain uniform and small-size solder particles
Externí odkaz:
https://doaj.org/article/e8716004f0c34988951e7d1fc7b924b0
Publikováno v:
ACS Applied Polymer Materials. 5:2760-2773
Autor:
Xiaoman Min, Yongjun Huo, Ning Sun, Hongwei Zhi, Haitao Li, Sishuo Zhang, Wenqiang Cui, Yanlin Guo, Hongyun Wu
Publikováno v:
Medical Science Monitor. 29
Autor:
Shuo Zhang, Cheng Bi, Tianling Qin, Yanfei Liu, Jie Cao, Jiaqi Song, Yongjun Huo, Menglu Chen, Qun Hao, Xin Tang
Silicon-based complementary metal-oxide-semiconductors (CMOS) devices have dominated the technological revolution in the past decades. With increasing demands in machine vision, autonomous driving, and artificial intelligence, Si-CMOS imagers, as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b500dc0df82946faee5d248088bdb4c4
https://doi.org/10.21203/rs.3.rs-2076887/v1
https://doi.org/10.21203/rs.3.rs-2076887/v1