Zobrazeno 1 - 10
of 144
pro vyhledávání: '"Yonghao, Han"'
Autor:
Xin Zhang, Caoyuan Mu, Yonghao Han, Xue Liu, Hao Liu, Dawei Jiang, Muyun Han, Jia Wang, Lin Zhao
Publikováno v:
Journal of Materials Chemistry A; 5/7/2024, Vol. 12 Issue 17, p10571-10578, 8p
Publikováno v:
Physical Chemistry Chemical Physics. 25:6288-6294
The significant conductivity enhancement of semiconductor BiOI up to 19.2 GPa has provided an example of the directed regulation of the electrical properties of BiOX layered materials using controllable pressure.
Autor:
Yue Lin, Dianlong Zhao, Zifan Yu, Jia Wang, Min Cao, Dawei Jiang, Xin Zhang, Yingying Song, Hao Liu, Chunxiao Gao, Yonghao Han
Publikováno v:
The Journal of Physical Chemistry C. 126:21833-21838
Publikováno v:
Journal of Materials Chemistry C. 10:3531-3537
BiSb was found to transform into a Weyl semimetal at ∼4 GPa. Detailed pressure-induced structural phase transitions and changes in electrical transport properties are explored.
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
The Review of scientific instruments. 93(10)
Temperature induced pressure drift in the diamond anvil cell (DAC) is a major issue in high-pressure high-temperature experiments. It is commonly acknowledged that these drifts originate from multiple factors, but no systematic descriptions have been
Publikováno v:
The Journal of Physical Chemistry C. 125:8788-8793
Because electrostrictive materials are completely sealed and confined in a diamond anvil cell (DAC), their strain and atomic displacement excited by electric field cannot be in situ measured by gen...
Publikováno v:
The Journal of Physical Chemistry C. 125:3314-3319
The influence of grain sizes, size effects, has long been a key factor influencing the properties and even the phase transformation pathways of nanomaterials and has resulted in a lot of intriguing...
Autor:
Tianru Qin, Chunxiao Gao, Qinglin Wang, Youjin Zheng, Yonghao Han, Hao Liu, Donghui Yue, Ji Tingting
Publikováno v:
The Journal of Physical Chemistry C. 124:17932-17938
In situ impedance measurement and first-principles calculations have been performed to investigate the effect of high pressure (up to 35.5 GPa) on the dielectric properties of SrMoO4. It is found t...
Publikováno v:
Physical chemistry chemical physics : PCCP. 23(47)
In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up to 30.2 GPa) on the metallization and dielectric properties of GaP. It is found that the carr