Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Yonghan Roh"'
Autor:
Youjin Lee, Yonghan Roh
Publikováno v:
Applied Sciences, Vol 13, Iss 4, p 2660 (2023)
Enormous amounts of data are generated and analyzed in the latest semiconductor industry. Established yield prediction studies have dealt with one type of data or a dataset from one procedure. However, semiconductor device fabrication comprises hundr
Externí odkaz:
https://doaj.org/article/cc5a67098d664e41902016cb6863d7ee
Publikováno v:
Micro and Nano Systems Letters, Vol 6, Iss 1, Pp 1-5 (2018)
Abstract A catalytic combustible type single-chip micro gas sensor was fabricated by MEMS technology and responses with input powers and methane and hydrogen gas concentrations were characterized. The ranges of responses at Pt thickness of 450 nm and
Externí odkaz:
https://doaj.org/article/afda801957f540d8b556ec43513b98e8
Publikováno v:
Applied Sciences, Vol 10, Iss 17, p 6081 (2020)
We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication process. For instance, we can effectively deactivate the surface defects of quantum dot (QD)
Externí odkaz:
https://doaj.org/article/0e9a11412dc947e981ce3fc0ff1ec2e1
Publikováno v:
AIP Advances, Vol 8, Iss 9, Pp 095114-095114-9 (2018)
To realize field effect transistors with multi-layered MoS2 and WSe2 (hereafter denoted as MoS2 FET and WSe2 FET), many device instability problems should be surmounted, such as the hysteresis generation of the devices. In order to clarify the mechan
Externí odkaz:
https://doaj.org/article/7330e7652e4f4d2cae90c4088909aa96
Publikováno v:
Current Applied Physics. 38:81-90
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c0c93f62b27f2b45c70aa06e7e638b
https://doi.org/10.1016/j.cap.2022.03.007
https://doi.org/10.1016/j.cap.2022.03.007
Autor:
Youjin Lee, Yonghan Roh
Publikováno v:
2022 IEEE International Conference on Big Data (Big Data).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::006dc454ae1d4be2ccf46327aabba411
https://doi.org/10.1109/bigdata55660.2022.10020526
https://doi.org/10.1109/bigdata55660.2022.10020526
Autor:
Jaewon Jeong, Seokwon Jeong, Junekyun Park, Sanghyun Lee, Juhyung Kim, Yonghan Roh, Jaehyun Kim
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:6152-6157
To solve charge-imbalanced problem caused by excessive electron injection into the emitting layer (EML) of quantum dot light emitting diodes (QLEDs) with ZnO electron transport layer (ETL), we proposed QLEDs with TPBi((2,2',2''-(1,3,5-Benzinetriyl)-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2dbb76f107d0111c66fdda0a5b1ceff1
https://doi.org/10.1166/jnn.2019.17020
https://doi.org/10.1166/jnn.2019.17020
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:7327-7330
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b97f972499358411addd6e4349b63558
https://doi.org/10.1166/jnn.2017.14759
https://doi.org/10.1166/jnn.2017.14759
Publikováno v:
ECS Transactions. 77:35-39
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf03dc3eeda94272770365f7fc79965
https://doi.org/10.1149/07708.0035ecst
https://doi.org/10.1149/07708.0035ecst
Autor:
Jeong-Hoon Oh, Hyuck-Chai Jung, Ilgweon Kim, Gyo-Young Jin, Hyoungsun Hong, Segeun Park, Yonghan Roh
Publikováno v:
Microelectronics Reliability. 65:16-19
For the first time, the current failure of p-channel MOSFETs used for the sub-wordline driver of state-of-the-art DRAM chips was investigated during off-state switching cycles. With increasing switching speed for the sub-wordline driver, the subthres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4868912ac5e35074480c73df9376c5e0
https://doi.org/10.1016/j.microrel.2016.08.007
https://doi.org/10.1016/j.microrel.2016.08.007