Zobrazeno 1 - 10
of 191
pro vyhledávání: '"Yonghai Chen"'
Publikováno v:
New Journal of Physics, Vol 26, Iss 1, p 013023 (2024)
The influence of spatial strain distribution on the anomalous circular photogalvanic effect (ACPGE) is investigated in the p-type GaAs material. By tuning the position of exerted stress, it is experimentally observed that the uniform strain related A
Externí odkaz:
https://doaj.org/article/259d767f167e4e1f9b83fcd6638b5251
Publikováno v:
Cancer Cell International, Vol 21, Iss 1, Pp 1-21 (2021)
Abstract Background The aim of this study was to construct a model based on the prognostic features associated with epithelial–mesenchymal transition (EMT) to explore the various mechanisms and therapeutic strategies available for the treatment of
Externí odkaz:
https://doaj.org/article/7db4f30d144f4431a78638ec27c454dc
Publikováno v:
Frontiers in Oncology, Vol 11 (2021)
BackgroundPancreatic adenocarcinoma (PAAD) is a malignant tumor of the digestive system that is associated with a poor prognosis in patients owing to its rapid progression and high invasiveness.MethodsNinety-seven invasive-related genes obtained from
Externí odkaz:
https://doaj.org/article/62119121dc034316b70dec810fb5ced7
Publikováno v:
Frontiers in Cell and Developmental Biology, Vol 9 (2021)
Background: The prognosis of patients with hepatocellular carcinoma (HCC) is negatively affected by the lack of effective prognostic indicators. The change of tumor immune microenvironment promotes the development of HCC. This study explored new mark
Externí odkaz:
https://doaj.org/article/c77882e2ca904805813105c0ef3f3dbe
Autor:
Jinling Yu, Xiaolin Zeng, Yumeng Wang, Lijia Xia, Shuying Cheng, Yonghai Chen, Yu Liu, Yunfeng Lai, Qiao Zheng
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract The inverse spin Hall effect induced by circularly polarized light has been observed in a GaAs/AlGaAs two-dimensional electron gas. The spin transverse force has been determined by fitting the photo-induced inverse spin Hall effect (PISHE) c
Externí odkaz:
https://doaj.org/article/bb1c2876953f49769e8544ed251e15c8
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET sw
Externí odkaz:
https://doaj.org/article/479ec0543d0f483c837259e85b2ce08a
Publikováno v:
ACS Applied Materials & Interfaces; 7/31/2024, Vol. 16 Issue 30, p40297-40308, 12p
Publikováno v:
Chinese Physics B.
The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi$_2$Te$_3$ films was investigated. It was revealed that the helicity-dependent photoconductivity current on the left edge of the Bi$_2$Te$_3$ film
Autor:
Xinjie Lang, Jinling Yu, Xiyu Hong, Yonghai Chen, Shuying Cheng, Yunfeng Lai, Ke He, Qikun Xue
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 150:115663
Publikováno v:
Optics Express. 31:14473
A persistent spin helix with equal strength of the Rashba and Dresselhaus spin-orbit coupling (SOC) is expected for future spintronic devices due to the suppression of spin relaxation. In this work we investigate the optical tuning of the Rashba and