Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Yongfa Fan"'
Autor:
ChangAn Wang, Yongfa Fan, Mu Feng, Qian Xie, Jazer Wang, Christopher Kaplan, Michael Crouse, Xiaoyang Li, Stephen Hsu, Peigen Cao, Yi-Hsing Peng, Stephen Chang, Jun Ye, Youping Zhang, Bin Cheng, Ken Yang, Leiwu Zheng, Jen-Shiang Wang, Austin Peng, Li-Hao Yeh, Cuiping Zhang, Rafael Howell, Alexander Tan, Yiqiong Zhao, Jun Lang, Xiaolong Zhang
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Weina Shi, Liang Zhu, Yuqian chen, Jiao Huang, Jinze Wang, Qian Xie, Bilun Zhang, Yunfei Xi, Wenhao Pan, Yuanxia Zheng, Yongfa Fan, Jin Cheng, Yu Zhao, Leiwu Zheng
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Jiao Huang, Yongfa Fan, Bin Cheng, Yunbo Guo, Lei Wang, Jinze Wang, Liang Liu, Yanjun Xiao, Mu Feng
Publikováno v:
2021 International Workshop on Advanced Patterning Solutions (IWAPS).
Publikováno v:
SPIE Proceedings.
3D Resist profile aware OPC has becoming increasingly important to address hot spots generated at etch processes due to the mass occurrence of non-ideal resist profile in 28nm technology node and beyond. It is therefore critical to build compact mode
Publikováno v:
SPIE Proceedings.
Mask topography (Mask3D) effect is one of the most influential factors in sub-28 nm technology node. To build a successful Mask3D compact model, the runtime efficiency, accuracy and the flexibility to handle various geometry patterns are the three mo
Publikováno v:
SPIE Proceedings.
As the technology node keeps shrinking down to sub-28 nm, mask topography (Mask3D) effect is one of the most influential factors to draw intensive research lately. To build a successful Mask3D compact model, the runtime efficiency, accuracy and the f
Autor:
Anthony Chunqing Wang, Jungchan Kim, Taehyeong Lee, Chanha Park, Sung-Woo Lee, Donggyu Yim, Irene Su, Jeonkyu Lee, Hyunjo Yang, Robert E Boone, Jaeseung Choi, Munhoe Do, Yongfa Fan, Kevin Lucas, Jung-Hoe Choi, Hua Song, Sangjin Oh, Chunsoo Kang
Publikováno v:
SPIE Proceedings.
Traditional rule-based and model-based OPC methods only simulate in a very local area (generally less than 1um) to identify and correct for systematic optical or process problems. Despite this limitation, however, these methods have been very success
Autor:
Thomas Schmoeller, Bernd Kuechler, Lena Zavyalova, Yongfa Fan, Wolfgang Hoppe, Puvan Perampalam, Qing Yang, Kar Kit Koh, Makoto Miyagi
Publikováno v:
SPIE Proceedings.
While critical lithographic feature size diminishes, resist profile can vary significantly as image varies. As a consequence, the final etch results are becoming more dependent on 3D resist profile rather than only a simple 2D resist image as an etch
Autor:
Yongfa Fan, Jianliang Li, Weimin Gao, Kevin Lucas, Jing Xue, Lawrence S. Melvin, Peter De Bisschop, Qiliang Yan
Publikováno v:
SPIE Proceedings.
As modern photolithography feature sizes reduce, the use of sub-resolution assist features (SRAFs) to improve the manufacturing process window has become more prevalent. Beyond the assist features placement based on rules, a model based assist featur
Publikováno v:
Proceedings of the 9th International Symposium on Antennas, Propagation and EM Theory.
Diversification, styling, miniaturization and cost reduction are trends in the field of portable electronics. The 3D technology is an innovative way to meet this demand. This paper evaluated the Pad Printing 3D antenna manufacture technology which of