Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Yongcheng Deng"'
Publikováno v:
Journal of Orthopaedic Surgery and Research, Vol 19, Iss 1, Pp 1-12 (2024)
Abstract Background Heterotopic ossification (HO) is a frequent complication of joint trauma or surgery, commonly occurring after hip replacements, acetabular or other joint injuries, or surgeries. Indomethacin has long been used to prevent HO and is
Externí odkaz:
https://doaj.org/article/b5986c8bfc4944b097c4da151383184f
Autor:
Caihong Xie, Yongcheng Deng, Dong Zhang, Junbo Li, Yimin Xiong, Mangyuan Ma, Fusheng Ma, Wei Tong, Jihao Wang, Wenjie Meng, Yubin Hou, Yuyan Han, Qiyuan Feng, Qingyou Lu
Publikováno v:
Advanced Science, Vol 11, Iss 39, Pp n/a-n/a (2024)
Abstract The electronic orders in kagome materials have emerged as a fertile platform for studying exotic quantum states, and their intertwining with the unique kagome lattice geometry remains elusive. While various unconventional charge orders with
Externí odkaz:
https://doaj.org/article/b6e28a20c07b4eabb83d62e5e7f1d74f
Autor:
Wenkai Zhu, Yingmei Zhu, Tong Zhou, Xianpeng Zhang, Hailong Lin, Qirui Cui, Faguang Yan, Ziao Wang, Yongcheng Deng, Hongxin Yang, Lixia Zhao, Igor Žutić, Kirill D. Belashchenko, Kaiyou Wang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
Abstract Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin
Externí odkaz:
https://doaj.org/article/157686a3e8304e969283ddd1a442aca7
Autor:
Xionghua Liu, Qiyuan Feng, Dong Zhang, Yongcheng Deng, Shuai Dong, Enze Zhang, Weihao Li, Qingyou Lu, Kai Chang, Kaiyou Wang
Publikováno v:
Advanced Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264ae7455a36784e46dfa81c104f8d9d
https://doi.org/10.1002/adma.202211634
https://doi.org/10.1002/adma.202211634
More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data from being
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b486571def1b251ed36d6a182a603bd5
http://arxiv.org/abs/2207.14427
http://arxiv.org/abs/2207.14427
Publikováno v:
2022 4th International Conference on Intelligent Control, Measurement and Signal Processing (ICMSP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70465d9c6361b59b7d5c4dd985b87d7c
https://doi.org/10.1109/icmsp55950.2022.9859098
https://doi.org/10.1109/icmsp55950.2022.9859098
Publikováno v:
Chinese Physics B. 31:117106
Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing. In this work, we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d8aa0c69e4730a07ed5bdf03bfb302
https://doi.org/10.1088/1674-1056/ac89dd
https://doi.org/10.1088/1674-1056/ac89dd
Publikováno v:
physica status solidi (a). 219:2200498
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bc5d293991d4128fa4f239ea44da5e1
https://doi.org/10.1002/pssa.202200498
https://doi.org/10.1002/pssa.202200498
Publikováno v:
Science China Physics, Mechanics & Astronomy. 64
Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties, such as zero stray field and ultrafast spin dynamics. Recently, the electrical manipulation of bulk properties of anti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e054295e2be023b2fb042403dda6e60
https://doi.org/10.1007/s11433-020-1684-3
https://doi.org/10.1007/s11433-020-1684-3
Autor:
Sumei Wang, Jing Xu, Cui Yan, Jun Luo, Tengzhi Yang, Nan Zhang, Kaiyou Wang, Meiyin Yang, Xueying Zhang, Shaoxin Li, Peiyue Yu, Chao Zhao, Yongcheng Deng, Yu Sheng, Li Yanru
We present an alternative mechanism to control domain wall motion, whose directions are manipulated by the amplitude of electrical current rather than its sign when modulating the exchange stiffness A while maintaining the Dzyaloshinskii-Moriya inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bdec8e76c58cb25a571221286bd5908