Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Yongbo, Su"'
Publikováno v:
Micromachines, Vol 15, Iss 4, p 527 (2024)
The single-event effects (SEEs) of frequency divider circuits and the radiation tolerance of the hardened circuit are studied in this paper. Based on the experimental results of SEEs in InP HBTs, a transient current model for sensitive transistors is
Externí odkaz:
https://doaj.org/article/21da059ce10643cab49cd1fc3147ce0c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 600-607 (2020)
In this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The problem of nonstoichiometric surface of InP etch stopper layer was found to be the result of d
Externí odkaz:
https://doaj.org/article/7eb243b0a0df4893824439b070c241b3
Autor:
Yongbo Su
Publikováno v:
IEEE Access, Vol 8, Pp 136966-136977 (2020)
Scientific selection of building materials supplier is of great importance in the management of construction projects. In this work, the selection problem of building material suppliers is investigated under the background of economic globalization b
Externí odkaz:
https://doaj.org/article/1cfe27505cdb49d3a2d5b8056c24aaca
Publikováno v:
IEEE Transactions on Electron Devices. 70:2262-2267
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d829e46df9ff9f8219856d0340052d
https://doi.org/10.1109/ted.2023.3262487
https://doi.org/10.1109/ted.2023.3262487
Autor:
Chen Zhang, Yongbo Su, Bo Mei, Feng Yang, Jialin Zhang, Huanqing Yun, Bo Liu, Yi Sun, Haiming Zhang, Zhi Jin, Yinghui Zhong
Publikováno v:
Current Applied Physics. 48:47-52
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fba9463d9bc4e2de29cc287fec0f91b
https://doi.org/10.1016/j.cap.2023.01.013
https://doi.org/10.1016/j.cap.2023.01.013
Autor:
Yanzhe Wang, Jianjun Ding, Ruize Feng, Shurui Cao, Fugui Zhou, Wuchang Ding, Yongbo Su, Zhi Jin
Publikováno v:
IEEE Transactions on Electron Devices. 70:941-946
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b537cc2c2dc64dacd963649ec95d278
https://doi.org/10.1109/ted.2023.3237996
https://doi.org/10.1109/ted.2023.3237996
Publikováno v:
IEEE Transactions on Electron Devices. 70:934-940
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f12dd6470a76c7231c6133406537f3
https://doi.org/10.1109/ted.2023.3235709
https://doi.org/10.1109/ted.2023.3235709
Publikováno v:
Computers, Materials & Continua. 75:5965-5986
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5760c22d73bf1b79d9d4c7bb2ff32ea9
https://doi.org/10.32604/cmc.2023.037611
https://doi.org/10.32604/cmc.2023.037611
Autor:
Peng Ding, Chen Chen, Muhammad Asif, Xi Wang, Jiebin Niu, Feng Yang, Wuchang Ding, Yongbo Su, Dahai Wang, Zhi Jin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 49-54 (2018)
This paper introduces a novel surface passivation using Si3N4 (20-nm)/Al2O3 (15-nm) stack layers in InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs). The new technology gives rise to good dc and RF performances in InP-based HEMTs. N
Externí odkaz:
https://doaj.org/article/36e5a13e20294a1db3ab5d65b2542ba3
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:4243-4247
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37bc3635f93385b90b7b99b9859ba4ea
https://doi.org/10.1109/tcsii.2022.3191675
https://doi.org/10.1109/tcsii.2022.3191675