Zobrazeno 1 - 8
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pro vyhledávání: '"YongHa Kang"'
Due to copyright restrictions, the access to the full text of this article is only available via subscription. We present heuristics for solving a difficult nonlinear integer programming (NIP) model arising from a multi-item single machine dynamic lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bf4dbaf453047fe651e2cfe0983e205
https://hdl.handle.net/10679/6143
https://hdl.handle.net/10679/6143
Publikováno v:
Microelectronics Reliability. 64:194-198
Channel width dependence of AC stress was investigated. OFF-state stress generated negative interface traps, positive oxide charges, and neutral traps in the whole channel region. Comparison of drain currents of parasitic and main MOSFET during OFF-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ad1bf989a952cc99020455c527b11d8
https://doi.org/10.1016/j.microrel.2016.07.090
https://doi.org/10.1016/j.microrel.2016.07.090
Publikováno v:
Microelectronics Reliability. 59:13-17
This paper proposes a method which can separate the parasitic effect from the drain current I d vs. gate voltage V g curves of MOSFETs, then uses this method to analyze degradation of experimental pMOSFETs due to hot-electron-induced punchthrough (HE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e2ab218fbb2d75263a651edd5412dee
https://doi.org/10.1016/j.microrel.2016.01.003
https://doi.org/10.1016/j.microrel.2016.01.003
We present a production planning model for a multiple product single machine dynamic lot-sizing problem with congestion. Using queuing models, we develop a set of functions to capture the nonlinear relationship between the output, lot sizes and avail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3037cb0be665a6a42cc49601e415b879
https://aperta.ulakbim.gov.tr/record/65205
https://aperta.ulakbim.gov.tr/record/65205
Publikováno v:
Japanese Journal of Applied Physics. 55:08PD03
We propose a method to predict the length dependency of the magnitude of degradation caused by negative bias temperature instability (NBTI) stress applied to a p-MOSFET. Threshold voltage degradation ΔV th varied according to the drain bias V d, dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6067acdfb9ef1ec887b8ee1b9c27c799
https://doi.org/10.7567/jjap.55.08pd03
https://doi.org/10.7567/jjap.55.08pd03
Autor:
Jae-Hoon Jang, Byung-Il Ryu, Hoosung Cho, Sung-Jin Kim, Kinam Kim, Jonghoon Na, Bonghyun Choi, Chadong Yeo, Yongha Kang, Dae-Gi Bae, Young-Chul Chang, Kun-Ho Kwak, Soon-Moon Jung, Jae-Hun Jeong, Hoon Lim, Jong-Hyuk Kim, Wonseok Cho
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
For the first time, the highest density SRAM, such as 512M bit SRAM, is developed by implementing the smallest 25F/sup 2/S/sup 3/ SRAM cell technology, whose cell size is 0.16/spl mu/m/sup 2/, and area saving peripheral SSTFT (stacked single-crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7150ac74da5f9f23c1a9b566f0746441
https://doi.org/10.1109/iedm.2004.1419128
https://doi.org/10.1109/iedm.2004.1419128
Autor:
Soon-Moon Jung, Hoon Lim, Wonseok Cho, Hoosung Cho, Chadong Yeo, Yongha Kang, Daegi Bae, Jonghoon Na, Kunho Kwak, Bonghyun Choi, Sungjin Kim, Jaehun Jeong, Youngchul Chang, Jaehoon Jang, Jonghyuk Kim, Kinam Kim, Byung-Il Ryu
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p265-268, 4p
Publikováno v:
Japanese Journal of Applied Physics; Jun2016, Vol. 55 Issue 6, p1-1, 1p