Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Yong-han Roh"'
Publikováno v:
Journal of the Korean Vacuum Society. 20:416-421
In this paper, the relationship of chamber contamination and the intensity change of specific wavelength was investigated. "diff_CO" formula was introduced to rule out background noise caused by external conditions and to detect when the polymer is r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f3270c7223d0cc609b856abe16c783e
https://doi.org/10.5757/jkvs.2011.20.6.416
https://doi.org/10.5757/jkvs.2011.20.6.416
Publikováno v:
Journal of the Korean Vacuum Society. 20:322-326
Etch process of silicon dioxide layer by using capacitively coupled plasma (CCP) is currently being used to manufacture semiconductor devices with nano-scale feature size below 50 nm. In typical CCP plasma etcher system, plasmas are generated by appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c00b0fde1c77b33cfbdea2ff2a1ca86
https://doi.org/10.5757/jkvs.2011.20.5.322
https://doi.org/10.5757/jkvs.2011.20.5.322
Autor:
Yong-Han Roh, Seung-Heon Lee, Kyungseok Oh, Jung-Chan Lee, Jun-Hee Lee, Mun-jun Kim, Seok-Woo Nam, Seung-jae Lee, Mansug Kang
Publikováno v:
ECS Transactions. 33:53-58
We studied the misalignment between active and gate layer in terms of silicon dislocation caused by high temperature anneal process in SOG based STI gap-fill process. The SOG process is one of good candidates to overcome gap-fill limitation due to it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09496e4e4e7ec2d55702a7ecf72e433
https://doi.org/10.1149/1.3567403
https://doi.org/10.1149/1.3567403
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 21:300-304
A novel characterization method was investigated to estimate the trap generation during the program /erase cycles in nand flash memory cell. Utilizing Fowler-Nordheim tunneling current, floating gate potential and oxide electric field, we established
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::318871d511b45950bd9192006de4419f
https://doi.org/10.4313/jkem.2008.21.4.300
https://doi.org/10.4313/jkem.2008.21.4.300
Autor:
Chang-Jib Kim, Yong-Han Roh
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 21:296-299
The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b12bb5bb1ed5dafbe2595d8625bce01
https://doi.org/10.4313/jkem.2008.21.4.296
https://doi.org/10.4313/jkem.2008.21.4.296
Autor:
Yong-Han Roh, Hyeon-Cheol Kim
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 21:213-216
The voltages for pixel electrodes on LCD panels are supplied with analog voltages from LCD Driver ICs (LDIs). The latest LDI developed for large LCD TV`s has suffered from the degradation of analog output characteristics (target voltage: AVO and outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2162471f3b35ba30d77e5792422e9b6
https://doi.org/10.4313/jkem.2008.21.3.213
https://doi.org/10.4313/jkem.2008.21.3.213
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 21:208-212
This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane () gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c6c999c096d232f3c0e469f5dcd3de
https://doi.org/10.4313/jkem.2008.21.3.208
https://doi.org/10.4313/jkem.2008.21.3.208
Autor:
Yong-Han Roh, Ho-Woo Park
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 18:883-890
In this paper, the established model of NBTI (Negative Bias Temperature Instability) mechanism was reviewed. Based on this mechanism, then, the influence of nitrogen was discussed among other processes. A constant concentration of nitrogen exists ins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::001f49e39f026800513dbd3ad56f3c75
https://doi.org/10.4313/jkem.2005.18.10.883
https://doi.org/10.4313/jkem.2005.18.10.883
Autor:
Young-Chul Jang, Yong-Han Roh, Nae-Eung Lee, Sunpil Youn, Kwanchong Roh, Ki-Su Kim, Sungwoo Yang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1591-1594
We have characterized the physical and electrical properties of a W–TiN stacked gate in metal–oxide–semiconductor devices. The degree of tungsten crystallization was enhanced when the N2/Ar ratio was increased during TiN sputtering deposition a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4921f550314ed88d6215c79b2897655f
https://doi.org/10.1116/1.1345913
https://doi.org/10.1116/1.1345913
Publikováno v:
2012 SEMI Advanced Semiconductor Manufacturing Conference.
The space of STI is considered as critical parameter for filling the STI trench free of void. On the other hand, as thickness of liner is thinner, it is insufficient to trap mobile charge and to satisfy the adhesion. The impact of STI liner with mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d75ca9bafc6ffeaac3a45eb360ae7cf4
https://doi.org/10.1109/asmc.2012.6212900
https://doi.org/10.1109/asmc.2012.6212900