Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yong-Yue Ciou"'
Publikováno v:
2010 International Symposium on Next Generation Electronics.
In this work, we for the first time explore the dual material gate (DMG) and inverse DMG devices for suppressing random dopant fluctuation (RDF)-induced characteristics fluctuation in 16-nm MOSFET devices. The physical mechanism of DMG devices to sup
Publikováno v:
2010 International Symposium on Next-Generation Electronics (ISNE); 2010, p28-31, 4p