Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yong-Taik Kim"'
Autor:
Jun-Young Park, Jae Hur, Yang-Kyu Choi, Choong-Ki Kim, Chang-Hoon Jeon, Tewook Bang, Seong-Wan Ryu, Seyeob Kim, Yun-Ik Son, Dae-Chul Ahn, Yong-Taik Kim, Gun-Hee Kim, Hagyoul Bae, Jae-Hoon Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:3247-3250
Autor:
Yong-Taik Kim, Hirokazu Kato, S. Inoue, Motofumi Komori, Hirotaka Tsuda, Kei Kobayashi, A. Mitra, K. Matasunaga, Hiroshi Tokue, Sachiko Kobayashi, Masanobu Saito, Tetsuro Nakasugi, T. Imamura, Wooyung Jung, Takeharu Motokawa, Tatsuhiko Higashiki, T. Komukai, Kazuya Fukuhara, J. Cho, Masamitsu Itoh, Masayuki Hatano, K. Takahata, Shingo Kanamitsu, Takuya Kono, Kohji Hashimoto
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest NIL system NZ2C shows the mix and match overlay (MMO) of 3.4 nm ( $3\sigma$ ) and the tem
Autor:
Jung Ho Shin, Min-Soo Yoo, Sung-Joo Hong, Yong-Taik Kim, Tae-Kyung Oh, Tae-Su Jang, Kyung Kyu Min, Donghoon Nam, Heimi Kwon, Seong-Wan Ryu
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We demonstrated a highly reliable buried-gate saddle-fin cell-transistor (cell-TR) using silicon migration technique of hydrogen (H 2 ) annealing after a dry etch to form the saddle-fin in a fully integrated 2y-nm 4Gb DRAM. It clearly shows a reducti
Autor:
Min-Soo Yoo, Jong-Ho Lee, Sung-Joo Hong, Kyung-Do Kim, Byung-Gook Park, Chan-Hyeong Park, Sung-Kye Park, Yong-Taik Kim, Kwi-Wook Kim
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
To characterize electrically the effect of the Cu diffusion in TSVs, a new test pattern is proposed and its effectiveness is verified experimentally. The test pattern has a shallow n+ region formed in an n-well region butted to the TSV dielectric sur
Autor:
Seon-Yong Cha, Kyung Kyu Min, Il-Woong Kwon, Sung-Kye Park, Sung-Joo Hong, Tae-Kyung Oh, Tae-Su Jang, Mikyung Kwon, Yong-Taik Kim, Seehe Cho
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
This paper proposes an equivalent circuit model of 3-D DRAM cell transistors with recess gate and saddle fin structure for the first time. The model effectively characterize the sub-threshold and off margin behavior of the scaled DRAM cell transistor
Autor:
Tae-Su Jang, Seok-Hee Lee, Min-Soo Yoo, Seon-Yong Cha, Jae-Goan Jeong, Yong-Taik Kim, Kyungdo Kim
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
The Vt variation and positive bias temperature instability (PBTI) of TiN/W and TiN metal buried-gate (BG) cell transistors in DRAM are characterized. The use of TiN gate shows a larger Vt variation and different PBTI behavior as compared with TiN/W g
Autor:
Seon-Yong Cha, Jae-Goan Jeong, Kyungdo Kim, Min-Soo Yoo, Sung-Joo Hong, Yong-Taik Kim, Tae-Su Jang
Publikováno v:
2011 International Reliability Physics Symposium.
The effect of mechanical stress induced by shallow trench isolation (STI) slope on the data retention characteristics of DRAM is investigated and a new electrical parameter for monitoring the mechanical stress is proposed. To maintain high and unifor
Autor:
Kwan-Yong Lim, H.-S. Yang, Yong-Taik Kim, Seung-Woo Shin, W.-K. Ma, G.-H. Kim, Se-kyoung Choi, S.-R. Won, Kyeong-Keun Choi, Yong Soo Kim, Seung Ryong Lee, Whoi-Yul Kim, S.-A. Jang, J.-H. Han, H.-J. Cho, Y.-S. Chun, Y.-K. Jung, Tae-Un Youn, Se-Jun Kim, Yunbong Lee, Jin Kim, S.-Y. Koo, Min Gyu Sung, Seung-Ho Pyi, Kyungdo Kim, J.-K. Lee, T.-K. Oh, Y.-T. Hwang
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
We compared WSix/WN and Ti/WN diffusion barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN diffusion barrier shows degradation of gate oxide, which is found to be due to t
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Autor:
Tae-Su Jang, Joong-Sik Kim, Sang-Min Hwang, Young-Hoon Oh, Kwang-Myung Rho, Seoung-Ju Chung, Su-Ock Chung, Jae-Geun Oh, Bhardwaj, S., Jungtae Kwon, Kim, D., Nagoga, M., Yong-Taik Kim, Seon-Yong Cha, Seung-Chan Moon, Sung-Woong Chung, Sung-Joo Hong, Sung-Wook Park
Publikováno v:
2009 Symposium on VLSI Technology; 2009, p234-235, 2p