Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yong-Sun Ko"'
Publikováno v:
Metals and Materials International. 19:335-339
In this study, the effect of the friction and wear of a polishing pad on the material removal rate of a silicon oxide wafer was investigated during chemical mechanical polishing (CMP) with ceria slurry. Further, the effect of surface properties of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e534e0b8c9236fc5186a52ee88b949a3
https://doi.org/10.1007/s12540-013-2031-0
https://doi.org/10.1007/s12540-013-2031-0
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P204-P209
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::945b863236aa8a560936c7464f7d2921
https://doi.org/10.1149/2.021204jss
https://doi.org/10.1149/2.021204jss
Publikováno v:
Journal of The Electrochemical Society. 142:571-576
We have studied the characteristics of the mixture of HNO 3 , HF, and H 2 O 2 chemicals called the controlled slight etch (CSE) solution as an effective wafer cleaning solution. The silicon etch rate in the CSE solution was not dependent on HF concen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81635b7dad276eea80b75bf73d6231be
https://doi.org/10.1149/1.2044100
https://doi.org/10.1149/1.2044100
Autor:
Chang-Lyong Song, Kyung-hyun Kim, Ki-Hoon Jang, Kwang-Bok Kim, Joung-Duk Ko, Yong-Sun Ko, In-Seac Hwang, Hyojin Lee
Publikováno v:
MRS Proceedings. 816
CMP(Chemical Mechanical Planarization) process is widely used to reduce step height in semiconductor fabrication processes. As a design rule shrinks, a highly planar surface becomes inevitable within wafer scales. In order to get a high degree of a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9784d56686ddb412600f113aa78915b7
https://doi.org/10.1557/proc-816-k4.2
https://doi.org/10.1557/proc-816-k4.2