Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yong-Suk Roh"'
Autor:
Woo Kyoung Kim, Lee Seok Jin, Sunmo Kwon, Jaseok Koo, Ji Hyeon Park, Dohoon Kim, Jae Min Myoung, William N. Shafarman, Jung Ki Young, Yong Suk Roh
Publikováno v:
Electronic Materials Letters. 12:484-493
In this work, the selenization of Mo/CuGa/In/Se (Se layer thickness: 1 μm) precursors followed by sulfurization was investigated. Particular emphasis was placed on the effect of the variation of the selenization temperature and sulfurization time on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6ed03160298346245055be5dc3f7d4
https://doi.org/10.1007/s13391-016-4011-2
https://doi.org/10.1007/s13391-016-4011-2
Autor:
Jong-Heon Yang, Oh-Sang Kwon, Jae-Chul Do, Hee-Ok Kim, Sung Haeng Cho, Jeong-Rak Lee, Yong-Suk Roh, Eun-Suk Park, Chi-Sun Hwang, Wan-Woo Park
Publikováno v:
SID Symposium Digest of Technical Papers. 48:1262-1264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfad3e35d9fd60228864f66ed0b26444
https://doi.org/10.1002/sdtp.11860
https://doi.org/10.1002/sdtp.11860
Autor:
Hee-Ok Kim, Sang-Hee Ko Park, Sung Haeng Cho, Oh-Sang Kwon, Yong-Suk Roh, Eunsook Park, Chi-Sun Hwang, Min Ki Ryu
Publikováno v:
physica status solidi (a). 211:2126-2133
We report the simultaneous improvements of the threshold voltage (Vth) stabilities under the prolonged positive gate bias stress (PBS) and negative gate bias under illumination stress (NBIS) by employing the gate dielectric/channel interface engineer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9390b33734617c53e6017024db125b0
https://doi.org/10.1002/pssa.201431062
https://doi.org/10.1002/pssa.201431062
Autor:
Hee-Sun Yang, Eui-Wan Lee, Yong-Suk Roh, Hyeong-Rag Lee, Sung-Youp Lee, Chang-Duk Kim, Hoon-Sik Jang, Ilsu Rhee, Do-Hyung Kim
Publikováno v:
Nanotechnology. 17:5180-5184
The current–voltage (I–V) characteristics of carbon nanotubes (CNTs) during field emission were investigated by in situ imaging and field-emission (FE) measurement inside a field-emission scanning electron microscope (FE-SEM). A primary electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fec42099ef0c5d731978c0668e2eb493
https://doi.org/10.1088/0957-4484/17/20/023
https://doi.org/10.1088/0957-4484/17/20/023