Zobrazeno 1 - 10
of 227
pro vyhledávání: '"Yong-Seo Koo"'
Publikováno v:
IEEE Access, Vol 12, Pp 33555-33568 (2024)
Currently, in the semiconductor market, reliability response to Electro Static Discharge (ESD) situations is being discussed as an alternative to internal Integrated Circuit (IC) destruction. In this paper, the ESD protection circuit design integrate
Externí odkaz:
https://doaj.org/article/a4ccf1cdf45f420c817b5f8a5009a7ef
Autor:
Sang-Wook Kwon, Yong-Seo Koo
Publikováno v:
IEEE Access, Vol 11, Pp 37472-37482 (2023)
The modern electronic device should be able to provide stable voltage and current under a variety of conditions. The LDO regulator used in the electronic device is a system that requires various voltages and load currents. This paper suggests to the
Externí odkaz:
https://doaj.org/article/aed49481d31d4db2b65274a8e3dde734
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1017-1023 (2021)
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably
Externí odkaz:
https://doaj.org/article/b9a17cd5689e4ec3a2c12905a3b44c7a
Autor:
Kyoung-Il Do, Yong-Seo Koo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 635-639 (2020)
The excellent area efficiency of dual-directional SCRs (DDSCRs) have made them desirable for low-voltage and high-voltage applications. However, to implement the required symmetrical structure, conventional DDSCRs have to lengthen their ESD discharge
Externí odkaz:
https://doaj.org/article/284a81dc2f254366b4981dff06dd6eb9
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 601-605 (2019)
Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency. However, DDSCRs have a low holding voltage for
Externí odkaz:
https://doaj.org/article/c4cc12ecb12f45a4a06d87d447d6b7c7
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 691-695 (2018)
This paper proposes a new structure of silicon controlled rectifier (SCR)-based ESD protection circuit using a penta-well for ESD protection in 5 V applications. The proposed circuit exhibits higher holding voltage and current-driving capability than
Externí odkaz:
https://doaj.org/article/79cc431377ad403fa58e73d7a037a1c0
Publikováno v:
ETRI Journal, Vol 39, Iss 5, Pp 746-755 (2017)
In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic‐diode‐triggered silicon controlled rectifier. The breakdown voltage and trigger voltage (Vt) of the proposed ESD pro
Externí odkaz:
https://doaj.org/article/a522b9129fe54af5ba6213dff52cac05
Autor:
Sang Wook Kwon, Yong Seo Koo
Publikováno v:
Electronics Letters, Vol 58, Iss 19, Pp 714-716 (2022)
Abstract Various levels of circuits and systems in the ultra‐low nanometer fabrication process should be considered to implement a system‐on‐chip (SOC) application to reduce power consumption. This letter is intended to propose a current detect
Externí odkaz:
https://doaj.org/article/1d0230d5c8f84c2ca3209873adf984f8
Autor:
Pae Sun Suh, Ji Eun Park, Yun Hwa Roh, Seonok Kim, Mina Jung, Yong Seo Koo, Sang-Ahm Lee, Yangsean Choi, Ho Sung Kim
Publikováno v:
Korean Journal of Radiology; Apr2024, Vol. 25 Issue 4, p374-383, 10p
Publikováno v:
Journal of the Institute of Electronics and Information Engineers. 60:3-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de61f3cac20ab29cf17a8dff5257b87f
https://doi.org/10.5573/ieie.2023.60.4.3
https://doi.org/10.5573/ieie.2023.60.4.3