Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Yong-Duck Kim"'
Autor:
Chanjin Park, Hee-Ok Kim, Jong-Heon Yang, Jae-Eun Pi, Yong-Duck Kim, Chun-Won Byun, Kyeong-Soo Kang, Ji-Hwan Park, Minji Kim, Hyoungsik Nam, Soo-Yeon Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 668-676 (2024)
In this paper, a new pixel circuit for active matrix organic light-emitting diode (AMOLED) display that can achieve high uniformity in low gray levels and its driving method are proposed. The proposed circuit compensates for threshold voltage variati
Externí odkaz:
https://doaj.org/article/c849a354d8084be7b5b3a083ef9068bc
Publikováno v:
SID Symposium Digest of Technical Papers. 53:32-35
Publikováno v:
ACS Applied Electronic Materials. 3:5037-5047
Autor:
W.M. Lee, Ki-Lim Han, Yong-Duck Kim, Jong-Il Lee, Jun-Hyeok Kim, Byong-Deok Choi, Jin-Seong Park
Publikováno v:
IEEE Electron Device Letters. 42:359-362
The dynamic inverter using amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) is revealed to be more robust to tensile strain than the static inverter that is most widely used in TFT circuits. The results with the inverters can b
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:805-816
This article proposes a physical unclonable function (PUF) based on the contact formation probability. The contact here is the interconnect layer between the metal and the silicon in a chip. As the contact is designed smaller than the size given in t
Autor:
Byong-Deok Choi, Jin-Seong Park, Yong-Duck Kim, Jong-Seok Kim, Ki-Lim Han, Jong-Il Lee, Beom Su Kim
Publikováno v:
IEEE Electron Device Letters. 40:1128-1131
Prior research has reported that the device characteristics of amorphous indium–gallium–zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been changed by instabilities due to electrical stress. Because positive bias stress and high current st
Autor:
Jung-Woo Byun, Jin-Seong Park, Byong-Deok Choi, Yong-Duck Kim, Ki-Lim Han, Jun-Hwan Jang, Jong-Seok Kim
Publikováno v:
IEEE Transactions on Electron Devices. 65:3269-3276
Most thin-film transistor (TFT) gate drivers integrated on the display panel use the carry signals between the stages. In our previous works, we found that these carry-type gate drivers are subject to the reliability problem in a flexible display, si
Publikováno v:
ACS Applied Electronic Materials; 11/23/2021, Vol. 3 Issue 11, p5037-5047, 11p
Autor:
Yong-Duck Kim
Publikováno v:
Journal of Agriculture & Life Science. 50:43-53
Autor:
Jung Gyu Hwang, Yong Duck Kim
Publikováno v:
Journal of Agriculture & Life Science. 50:61-71