Zobrazeno 1 - 10
of 506
pro vyhledávání: '"Yong Young Noh"'
Autor:
Ho Jin Jang, Jun Yeob Lee, Jeonghun Kwak, Dukho Lee, Jae-Hyeung Park, Byoungho Lee, Yong Young Noh
Publikováno v:
Journal of Information Display, Vol 0, Iss 0, Pp 1-8 (2019)
In 2018, great progress in display performances was achieved in the field of virtual reality (VR), augmented reality (AR), quantum dot light-emitting diode (QLED), and organic light-emitting diode (OLED) displays, in addition to the thin-film transis
Externí odkaz:
https://doaj.org/article/65baa5851d5340668c4a7d0441f644c7
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract The unique semiconducting characteristics of 2D materials, such as transition metal dichalcogenides (TMDs), have drawn significant interest in the field of electronic devices. However, the dependence of the device performance on the electric
Externí odkaz:
https://doaj.org/article/56aa98a88e5e4a7ba7528165c35214d8
Publikováno v:
Small Structures, Vol 5, Iss 4, Pp n/a-n/a (2024)
Tin‐based halide perovskites garner attention as a promising semiconducting layer material for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based counterparts. However, they suffer from low ambient stabili
Externí odkaz:
https://doaj.org/article/1081e58550be4708aec0aad3fefe64e0
Publikováno v:
Journal of Information Display, Vol 24, Iss 4, Pp 255-261 (2023)
Here, we report the fabrication of high-performance printable WSe2 transistors via the doping of p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 tra
Externí odkaz:
https://doaj.org/article/b03aaa58a16c4936bb1f0f03c00cde83
Autor:
Mingyun Kang, Dong Hyeon Lee, Juhee Kim, Geon‐Hee Nam, Seyeon Baek, Seongmin Heo, Yong‐Young Noh, Dae Sung Chung
Publikováno v:
Advanced Science, Vol 11, Iss 7, Pp n/a-n/a (2024)
Abstract In this study, it is demonstrated that CsPbBr3 perovskite nanocrystals (NCs) can enhance the overall performances of photomultiplication‐type organic photodiodes (PM‐OPDs). The proposed approach enables the ionic‐polarizable CsPbBr3 NC
Externí odkaz:
https://doaj.org/article/6bde513685174b40842141b87ffa28c5
Publikováno v:
Journal of Information Display, Vol 24, Iss 3, Pp 159-168 (2023)
This review aims to provide a technical roadmap and an overview of recent progress in the development of backplane thin film transistors (TFTs) for organic light-emitting diodes flat panel displays and next-generation flexible displays. In the introd
Externí odkaz:
https://doaj.org/article/14ae21dc9c5d469682ab3264481fad13
Autor:
Noh-Hwal Park, Eun Sol Shin, Gi-Seong Ryu, Jimin Kwon, Dongseob Ji, Hyunjin Park, Yun Ho Kim, Yong-Young Noh
Publikováno v:
Journal of Information Display, Vol 24, Iss 2, Pp 109-118 (2023)
Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach
Externí odkaz:
https://doaj.org/article/e27a9dd0ffcc4c4c8706341d2224a1f9
Autor:
Dongseob Ji, Su Yeol Yoon, Seungju Jeon, Ji‐Young Go, Gwon Byeon, Jae Ook Choi, Jiwoo Min, Yejin Kim, Do‐Hoon Hwang, Kilwon Cho, Bogyu Lim, Yong‐Young Noh
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 19, Pp n/a-n/a (2023)
Abstract Polymer semiconductors are promising materials for stretchable, wearable, and implantable devices due to their intrinsic flexibility, facile functionalization, and solution processability at low temperatures. However, the crystalline domain
Externí odkaz:
https://doaj.org/article/db5a0e7de7914c4db4b35ec6f340bdf4
Autor:
Jae‐Hyeok Cho, Ji‐Young Go, Tan Tan Bui, Seunguk Mun, Yunseok Kim, Kyunghan Ahn, Yong‐Young Noh, Myung‐Gil Kim
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Metal halide perovskites have attracted a considerable amount of research attention with significant progress made in the field of optoelectronics. Despite their outstanding electrical characteristics, structural defects impede their potenti
Externí odkaz:
https://doaj.org/article/6e4269ce3bbf48f2866b97c974225b0f
Publikováno v:
InfoMat, Vol 5, Iss 1, Pp n/a-n/a (2023)
Abstract Tin (Sn2+)‐based halide perovskites have been developed as the most promising alternatives to their toxic Pb‐based counterparts in optoelectronic devices. However, the facile tin vacancy formation and easy oxidization characteristics mak
Externí odkaz:
https://doaj.org/article/8738dae72fb94e709c00c10457aeea95