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pro vyhledávání: '"Yong Seok Eun"'
Autor:
Woo Sik Yoo, Choon Hwan Kim, Kyoung Bong Rouh, Kitaek Kang, Hyo Sang Kang, Toshikazu Ishigaki, Yong Seok Eun, Takeshi Ueda
Publikováno v:
AIP Conference Proceedings.
Arsenic (As+) implanted p-type wafers for n+ junction were prepared and annealed in a resistively heated, single wafer rapid thermal furnace in N2. The wafers were non-destructively characterized by multi-wavelength Raman spectroscopy and multi-wavel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f0e5f05e71558c724a7365d7533357b
https://doi.org/10.1063/1.4766513
https://doi.org/10.1063/1.4766513
