Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yong Nam Koh"'
Publikováno v:
IEEE Sensors Journal. 22:12967-12975
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b2c3c0d5ae7fc90f10363e20b3d5625
https://doi.org/10.1109/jsen.2022.3177786
https://doi.org/10.1109/jsen.2022.3177786
Autor:
Byung-Hoon Suh, Kee-Tae Park, Young-joon Choi, Jung-Hoon Park, Kang-Deog Suh, Jin-Ki Kim, Yong-Nam Koh, Ki-Jong Lee, Young-Ho Lim, Hyung-Kyu Lim, Jeong-Hyong Yi, Jhang-rae Kim, Jongwook Park, Tae-Sung Jung
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:1575-1583
For a quantum step in further cost reduction, the multilevel cell concept has been combined with the NAND flash memory. Key requirements of mass storage, low cost, and high serial access throughput have been achieved by sacrificing fast random access
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36a5e7f9fda103d1381569a6c0167ed4
https://doi.org/10.1109/jssc.1996.542301
https://doi.org/10.1109/jssc.1996.542301
Autor:
Jang-Rae Kim, Young-Ho Lim, Young-joon Choi, Byung-Hoon Suh, Sung-Soo Lee, Jin-Sun Yum, Byung-Soon Choi, Kang-Deog Suh, Suk-Chon Kwon, Jung-Hyuk Choi, Yong-Nam Koh, Hyung-Kyu Lim, Jin-Ki Kim
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:1149-1156
While the performance of flash memory exceeds hard disk drives in almost every category, the cost of flash memory must come down in order to gain wider acceptance in mass storage applications. This paper describes a 3.3 V-only 32 Mb NAND flash memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::678aebdf91b47b629181c48f11c7ca5d
https://doi.org/10.1109/4.475701
https://doi.org/10.1109/4.475701
Autor:
Ki-Jong Lee, Byung-Hoon Suh, Jeong-Hyong Lee, Hyung-Kyu Lim, Jin-Ki Kim, Yong-Nam Koh, Tae-Sung Jung, Young-Ho Lim, Young-joon Choi, Kang-Deog Suh, Kee-Tae Park, Jung-Hoon Park, Jongwook Park, Jang-Rae Kim
Publikováno v:
1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.
The NAND flash memory was originally designed to target solid-state mass storage applications. Key requirements of mass storage, low cost and high serial access throughput, have been achieved by sacrificing a non-critical feature, fast random access.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7faae5715d72dbad1dbdda3ca5eb577a
https://doi.org/10.1109/isscc.1996.488501
https://doi.org/10.1109/isscc.1996.488501
Autor:
Byung-Hoon Suh, Yun-Jin Cho, Yong-Nam Koh, Kang-Deog Suh, Jongwook Park, Ki-Jong Lee, Young-joon Choi
Publikováno v:
1996 Symposium on VLSI Circuits. Digest of Technical Papers.
A new scheme for page programming of multi-level NAND flash memory has been developed. It maintains the 528 byte page size of 32 Mb NAND flash memories with a high throughput of 0.5 MB/s. The circuitry has been successfully implemented into an experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acdad5d79b975afc8a623d9af6ac4491
https://doi.org/10.1109/vlsic.1996.507758
https://doi.org/10.1109/vlsic.1996.507758
Autor:
Tae-Sung Jung, Young-Joon Choi, Kang-Deog Suh, Byung-Hoon Suh, Jin-Ki Kim, Young-Ho Lim, Yong-Nam Koh, Jong-Wook Park, Ki-Jong Lee, Jung-Hoon Park, Kee-Tae Park, Jhang-Rae Kim, Jeong-Hyong Yi, Hyung-Kyu Lim
Publikováno v:
IEEE Journal of Solid-State Circuits; 1996, Vol. 31 Issue 11, p1575-1583, 9p
Autor:
Kang-Deog Suh, Byung-Hoon Suh, Young-Ho Lim, Jin-Ki Kim, Young-Joon Choi, Yong-Nam Koh, Sung-Soo Lee, Suk-Chon Kwon, Byung-Soon Choi, Jin-Sun Yum, Jung-Hyuk Choi, Jang-Rae Kim, Hyung-Kyu Lim
Publikováno v:
IEEE Journal of Solid-State Circuits; 1995, Vol. 30 Issue 11, p1149-1156, 8p
Autor:
Young-Joon Choi, Kang-Deog Suh, Yong-Nam Koh, Jong-Wook Park, Ki-Jong Lee, Yun-Jin Cho, Byung-Hoon Suh
Publikováno v:
1996 Symposium on VLSI Circuits Digest of Technical Papers; 1996, p170-171, 2p
Autor:
Tae-Sung Jung, Young-Joon Choi, Kang-Deog Suh, Byung-Hoon Suh, Jin-Ki Kim, Young-Ho Lim, Yong-Nam Koh, Jong-Wook Park, Ki-Jong Lee, Jung-Hoon Park, Kee-Tae Park, Jang-Rae Kim, Jeong-Hyong Lee, Hyung-Kyu Lim
Publikováno v:
1996 IEEE International Solid-State Circuits Conference Digest of TEchnical Papers, ISSCC; 1996, p32-33, 2p
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