Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Yong Jo Park"'
Autor:
Yong-Jo Park
Publikováno v:
Journal of Human Rights & Law-related Education. 14:71-98
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2cf255ef05433370f7ed2367ca577c6
https://doi.org/10.35881/hler.2021.14.3.3
https://doi.org/10.35881/hler.2021.14.3.3
Autor:
Yong Jo Park
Publikováno v:
Journal of Human Rights & Law-related Education. 13:29-60
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c75b9b508bfd987560ca8176a488fa8
https://doi.org/10.35881/hler.2020.13.3.2
https://doi.org/10.35881/hler.2020.13.3.2
Autor:
Wong Joon Hwang, Hyung Kun Kim, Moo Whan Shin, Yong Jo Park, Tae Hee Lee, Jong Hwa Choi, Okhyun Nam
Publikováno v:
IEEE Transactions on Components and Packaging Technologies. 30:637-642
We investigated thermal behavior of GaN-based laser diode (LD) packages as a function of cooling systems, die attaching materials, chip loading conditions, and optical performances. The electrical thermal transient technique was employed for the ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e9b22fe37c3759a90720b14dde3bb15
https://doi.org/10.1109/tcapt.2007.906346
https://doi.org/10.1109/tcapt.2007.906346
Autor:
Kyoung Chan Kim, Suk Ho Yoon, Cheol Soo Sone, Yong Jo Park, Jeoung Wook Lee, Tae Geun Kim, Dong Ho Kim
Publikováno v:
Journal of Crystal Growth. 272:264-269
We propose a way of increasing overall efficiency of InGaN–GaN ultraviolet light-emitting diodes (UV LEDs) by placing a thin Si-doped AlGaN layer beneath the multiple quantum well (MQW). The AlGaN thin layer plays a role of tunneling barrier for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb28b077f88f9659edc0f2bca9fc471
https://doi.org/10.1016/j.jcrysgro.2004.08.100
https://doi.org/10.1016/j.jcrysgro.2004.08.100
Publikováno v:
phys. stat. sol. (a). 201:2686-2690
Metal-semiconductor-metal (MSM) ultraviolet photodetectors were successfully fabricated and characterized. Al 0.16 Ga 0.84 N/GaN heterostructures with HT-AlN interlayer whose thicknesses ranged from 30 to 70 nm were grown on sapphire (0001) to achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e26c5b0defa5e0d820c288275dfe021
https://doi.org/10.1002/pssa.200405048
https://doi.org/10.1002/pssa.200405048
Publikováno v:
Solid-State Electronics. 47:1533-1538
A comparison was made of the forward current–voltage characteristics of bulk GaN Schottky and p–n junction rectifiers using a quasi-three-dimensional simulator. The model includes incomplete ionization of the deep Mg acceptor (175 meV) in the p+-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788387f9dd6c540b0bbd45dbdca18acd
https://doi.org/10.1016/s0038-1101(03)00071-6
https://doi.org/10.1016/s0038-1101(03)00071-6
Autor:
R. Mehandru, Stephen J. Pearton, Soon-oh Park, James Robert Lothian, Yong Jo Park, Fan Ren, Suku Kim, Jihyun Kim
Publikováno v:
Solid-State Electronics. 47:1037-1043
A finite element simulation was used to quantitatively estimate the effectiveness of flip-chip bonding in the temperature rise of bulk GaN Schottky rectifiers under various conditions of current density, duty cycle, forward turn-on voltage and on-sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e9a89732db7e88f812542ada638cb65
https://doi.org/10.1016/s0038-1101(02)00481-1
https://doi.org/10.1016/s0038-1101(02)00481-1
Publikováno v:
Solid-State Electronics. 47:975-979
Junction termination extension (JTE) structures for GaN power Schottky rectifiers were investigated using a quasi-three-dimensional simulator. The use of single JTE edge termination was found to produce an almost fivefold increase in reverse breakdow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1d84dbc617a5eeea5911a0ca020a906
https://doi.org/10.1016/s0038-1101(02)00464-1
https://doi.org/10.1016/s0038-1101(02)00464-1
Publikováno v:
Journal of Crystal Growth. 252:51-57
We report on the solar-blind metal–semiconductor–metal (MSM) UV photodetector fabricated on the Al 0.3 Ga 0.7 N/GaN heterostructure layer grown on sapphire(0 0 0 1) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0cf06ea9b8c60e760792d4c2252c4b
https://doi.org/10.1016/s0022-0248(02)02523-x
https://doi.org/10.1016/s0022-0248(02)02523-x
Autor:
B. Luo, Yong Jo Park, Fan Ren, Sang-Yong Park, K. Ip, A.P. Zhang, K.H. Baik, Stephen J. Pearton
Publikováno v:
Solid-State Electronics. 46:2169-2172
GaN Schottky rectifiers employing guard-ring and SiO2 edge termination show almost ideal forward current characteristics, with ideality factor 1.08 and specific on-state resistance as low as 2.6×10−3 Ω cm2. A maximum forward current of 1.72 A at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5d0723005ee153176ad41e723ee0190
https://doi.org/10.1016/s0038-1101(02)00187-9
https://doi.org/10.1016/s0038-1101(02)00187-9