Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Yong En Syu"'
Autor:
Tianjiao Dai, Yong-En Syu, Ying-Chih Lai, Lei Li, Shengdong Zhang, Xinnan Lin, Heng-Jui Liu, Kuan-Chang Chang
Publikováno v:
Nanoscale. 12(43)
Considerable efforts have been made to obtain better control of the switching behavior of resistive random access memory (RRAM) devices, such as using modified or multilayer switching materials. Although considerable progress has been made, the relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7acfbd176bc26b73845fe513c90f8a1d
https://pubmed.ncbi.nlm.nih.gov/33030167
https://pubmed.ncbi.nlm.nih.gov/33030167
Autor:
Tai Fa Young, Guan Ru Liu, Jung Hui Chen, Ting-Chang Chang, Geng Wei Chang, Chi Fong Ai, Yong En Syu, Tai Ya Hsiang, Kuan-Chang Chang, Min Chen Chen, Jen-Wei Huang, Kai Huang Chen, Yu Ting Su, Tsung-Ming Tsai, Min Chuan Wang, Kuo Hsiao Liao, Rui Zhang, Tian Jian Chu, Simon M. Sze, Jhih Hong Pan, Syuan Yong Huang
Publikováno v:
The Journal of Supercritical Fluids. 178:105350
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfb924245e294149118c2295f341bbe
https://doi.org/10.1016/j.supflu.2021.105350
https://doi.org/10.1016/j.supflu.2021.105350
Autor:
Shu-Ping Liang, Ting-Chang Chang, Chih-Yang Lin, Kuan-Chang Chang, Tsung-Ming Tsai, Simon M. Sze, Rui Zhang, Po-Hsun Chen, Min-Chen Chen, Yong-En Syu, Hui-Chun Huang, Chih-Hung Pan
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q115-Q118
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7db8eaf956bf1a52d7cd7d8c1a39b74
https://doi.org/10.1149/2.0061605jss
https://doi.org/10.1149/2.0061605jss
Autor:
Jen-Chung Lou, Ji Chen, Ya-Chi Hung, Kuan-Chang Chang, Tsung-Ming Tsai, Simon M. Sze, Cheng-Hsien Wu, Tian-Jian Chu, Chih-Hung Pan, Min-Chen Chen, Ting-Chang Chang, Jin-Cheng Zheng, Yong-En Syu, Rui Zhang
Publikováno v:
IEEE Electron Device Letters. 36:1138-1141
In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd820856602742d8b2eebdebc072319d
https://doi.org/10.1109/led.2015.2477163
https://doi.org/10.1109/led.2015.2477163
Autor:
Kuo-Hsiao Liao, Kuan-Chang Chang, Kai-Huang Chen, Yong-En Syu, Simon M. Sze, Ting-Chang Chang, Tsung-Ming Tsai
Publikováno v:
Applied Physics A. 119:1609-1613
Bipolar switching properties and electrical conduction mechanism in Sn:SiO X thin-film RRAM devices were investigated and discussed. To complete the resistive switching properties of the stannum doped into silicon oxide thin films, the RTA-treated Sn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c8137cc45cd36c033a8dfa636080a8
https://doi.org/10.1007/s00339-015-9144-x
https://doi.org/10.1007/s00339-015-9144-x
Autor:
Ya-Hsiang Tai, Kuan-Chang Chang, Yong-En Syu, Geng-Wei Chang, Fu-Yen Jian, Ya-Chi Hung, Tsung-Ming Tsai, Jhe-Ciou Jhu, Ting-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 61:2119-2124
The instability of the gate bias and drain bias stresses is observed at high temperature in amorphous InGaZnO thin-film transistors (a-IGZO TFTs). The transfer characteristics of a-IGZO TFTs at different temperatures are also investigated in this pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2632395561784cda865606d2240a9c59
https://doi.org/10.1109/ted.2014.2319105
https://doi.org/10.1109/ted.2014.2319105
Autor:
Jhih Hong Pan, Syuan Yong Huang, Geng Wei Chang, Min Chen Chen, Jung Hui Chen, Simon M. Sze, Chi Fong Ai, Kuan-Chang Chang, Tai Fa Young, Jen-Wei Huang, Tsung-Ming Tsai, Tian Jian Chu, Guan Ru Liu, Yu Ting Su, Min Chuan Wang, Ting-Chang Chang, Kuo Hsiao Liao, Rui Zhang, Ya-Hsiang Tai, Yong En Syu, Kai Huang Chen
Publikováno v:
The Journal of Supercritical Fluids. 85:183-189
We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f79b2d19e6af9b204f6bb14f7efe3d
https://doi.org/10.1016/j.supflu.2013.09.002
https://doi.org/10.1016/j.supflu.2013.09.002
Autor:
Yong En Syu, Kuan Ju Liu, Yu-Ju Hung, Wei Kung Tsai, Ching-En Chen, Ting-Chang Chang, Szu-Han Ho, Bo You, Tseung-Yuen Tseng, Kuo Yu Chenge, Wen-Hung Lo, Ying Hsin Lu, Jyun Yu Tsai, James Wu
Publikováno v:
ECS Solid State Letters. 4:Q47-Q49
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::529c7611d81c42a2f8a554662b7bb789
https://doi.org/10.1149/2.0041510ssl
https://doi.org/10.1149/2.0041510ssl
Autor:
Ya-Chi Hung, Tsung-Ming Tsai, Kuan-Chang Chang, Yu-Ting Su, Ting-Chang Chang, Hua-Ching Lin, Rui Zhang, Yong-En Syu, Simon M. Sze, Hsin-Lu Chen, Wei Zhang, Min-Chen Chen, Jin-Cheng Zheng, Ying Hu
Publikováno v:
IEEE Electron Device Letters. 36:552-554
In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b347284fdf7d07664683629143aacfd
https://doi.org/10.1109/led.2015.2424996
https://doi.org/10.1109/led.2015.2424996
Autor:
Ya-Chi Hung, Tsung-Ming Tsai, Hua-Mao Chen, Jin-Cheng Zheng, Kuan-Chang Chang, Chih-Yang Lin, Simon M. Sze, Yong-En Syu, Yi-Ting Tseng, Rui Zhang, Ying-Lang Wang, Chih-Hung Pan, Wei Zhang, Kuan-Hsien Liu, Ting-Chang Chang
Publikováno v:
IEEE Electron Device Letters. 36:564-566
We have previously investigated the automatic current compliance property for indium tin oxide (ITO) resistance random access memory (RRAM). Traditionally, for the purpose of protecting RRAM, it is necessary to set equipment current compliance during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f95043b4407eb8b0921f90a886cb845
https://doi.org/10.1109/led.2015.2424226
https://doi.org/10.1109/led.2015.2424226