Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yong Cheol Choi"'
Publikováno v:
BMC Musculoskeletal Disorders, Vol 25, Iss 1, Pp 1-8 (2024)
Abstract Background There are insufficient in-depth studies on whether percutaneous lumbar nucleoplasty (PLN) is effective and safe for the treatment of uncontained lumbar disc herniation (ULDH). This study aimed to investigate the clinical efficacy
Externí odkaz:
https://doaj.org/article/09813b4d13da49b3bb3e42b22eb5b7aa
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
A 1200V LDMOS structure based on 600V LDMOS technology has been developed for level shifters of industrial high side gate driver IC and SPM® solution. For a 1200V LDMOS, the two serious phenomena occurred such as walk-out of a few hundreds volts and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d2b43af5319adb34f49dce631073055
https://doi.org/10.1109/ispsd.2009.5158064
https://doi.org/10.1109/ispsd.2009.5158064
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices and IC's.
For decades of years, the most advanced commercial LDMOS was made by double RESURF technique using p-type Held shaping layer until dual current path LDMOS which has triple RESURF structure. The specific on resistance of LDMOS was reduced to about 60%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6fc98dfd63acdf271381e6bd157530e
https://doi.org/10.1109/ispsd.2008.4538918
https://doi.org/10.1109/ispsd.2008.4538918
Publikováno v:
60th DRC. Conference Digest Device Research Conference.
RESURF LDMOS transistors are utilized in high side driver applications and other applications that mandate electrical isolation between source and substrate by using isolated RESURF technology. However, the BCD process using conventional isolated RES
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3737de423e72366a3a52487c5a972002
https://doi.org/10.1109/drc.2002.1029516
https://doi.org/10.1109/drc.2002.1029516
Publikováno v:
60th DRC. Conference Digest Device Research Conference.
A compensating ion-implantation method is introduced to make self-aligned extended-drain of 30 V lateral NMOS and PMOS transistors with the only one mask and to help the improvement of electrical SOA through the shift of the critical electric field p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8be641582936988da2d1b56195dcf20d
https://doi.org/10.1109/drc.2002.1029591
https://doi.org/10.1109/drc.2002.1029591
Publikováno v:
Device Research Conference. Conference Digest (Cat. No.01TH8561).
We present the extension of Hot-Electron-Limited SOA and Electrical SOA by optimising the two peaks of body current in 20 V LDMOS Transistors. The LDMOS has two peaks of body current and the origin of two peaks can be explained through hot carrier in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00beadc7583b7e2476bc6c4c4153ee8a
https://doi.org/10.1109/drc.2001.937875
https://doi.org/10.1109/drc.2001.937875
Publikováno v:
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
The analysis of hot-electron-limited SOA (Safe-Operating-Area) and electrical SOA using two peaks of body current in 20 V LDMOS transistors was investigated for the first time. The origin of the two peaks can be explained in terms of hot carrier inje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2877c2fee115d0a5e0150f22c9645fdf
https://doi.org/10.1109/ispsd.2001.934611
https://doi.org/10.1109/ispsd.2001.934611
Publikováno v:
SPIE Proceedings.
A 20V submicron BCDMOS process is presented with extended LDMOS SOA (Safe-Operating-Area) for smart power applications by optimizing body-current. The LDMOS has two peaks of body current and the origin of two peaks can be explained through hot carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30eaf569ae4fc355e5ef292f870fd5b9
https://doi.org/10.1117/12.444681
https://doi.org/10.1117/12.444681
Autor:
Choi, Yong Cheol1 (AUTHOR), Seo, Jong Hun1 (AUTHOR), Kim, Pius1 (AUTHOR) gamechanger@chosun.ac.kr
Publikováno v:
BMC Musculoskeletal Disorders. 1/2/2024, Vol. 25 Issue 1, p1-8. 8p.
Autor:
전기영1 iocky@hanmail.net
Publikováno v:
Journal of Digital Convergence. Dec2016, Vol. 14 Issue 12, p545-553. 9p.