Zobrazeno 1 - 10
of 398
pro vyhledávání: '"Yong‐Hae Kim"'
Autor:
Ji Hun Choi, Jae‐Eun Pi, Chi‐Young Hwang, Jong‐Heon Yang, Yong‐Hae Kim, Gi Heon Kim, Hee‐Ok Kim, Kyunghee Choi, Jinwoong Kim, Chi‐Sun Hwang
Publikováno v:
ETRI Journal, Vol 41, Iss 1, Pp 23-31 (2019)
Since the late 20th century, there has been rapid development in the display industry. Only 30 years ago, we used big cathode ray tube displays with poor resolution, but now most people use televisions or smartphones with very high‐quality displays
Externí odkaz:
https://doaj.org/article/f8cb0188e11f43d7b2b664c8fbc78701
Autor:
Chi-Young Hwang, Yong-Hae Kim, Ji Hun Choi, Gi Heon Kim, Jong-Heon Yang, Jae-Eun Pi, Hee-Ok Kim, Chi-Sun Hwang
Publikováno v:
Applied Sciences, Vol 8, Iss 9, p 1445 (2018)
Optical absorbers have been a topic of intense research due to their importance in many applications. In particular, multi-band and perfect absorption features in a desired frequency range are essential in broadband applications. In this work, we num
Externí odkaz:
https://doaj.org/article/25da38c92db141f09437b94e09020ceb
Autor:
Hyun-Min Ahn, Seo-Hyun Moon, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Jong-Heon Yang, Yong-Hae Kim, Sung-Min Yoon
Publikováno v:
IEEE Electron Device Letters. 43:1909-1912
Autor:
Shin-Ho Noh, Hyo-Eun Kim, Jong-Heon Yang, Yong-Hae Kim, Young-Ha Kwon, Nak-Jin Seong, Chi-Sun Hwang, Kyu-Jeong Choi, Sung-Min Yoon
Publikováno v:
IEEE Transactions on Electron Devices. 69:5542-5548
Autor:
Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, Young Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Sung-Min Yoon
Publikováno v:
ACS Applied Materials & Interfaces. 14:31010-31023
Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic e
Publikováno v:
IEEE Transactions on Electron Devices. 68:6159-6165
Device scaling of oxide-channel thin-film transistors (TFTs) toward sub-micrometer regime has been an urgent issue to realize higher-resolution displays and 3-D structured electronic devices. The channel-shortening effect is a serious problem in impl
Autor:
Young Ha Kwon, Kyu-Jeong Choi, Yong-Hae Kim, Chi-Sun Hwang, Seo-Hyun Moon, Soo-Hyun Bae, Nak-Jin Seong, Sung-Min Yoon, Jong-Heon Yang
Publikováno v:
ACS Applied Electronic Materials. 3:4849-4858
Autor:
Hyun-Min Ahn, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Jong-Heon Yang, Yong-Hae Kim, Gyungtae Kim, Sung-Min Yoon
Publikováno v:
Nanotechnology. 34:155301
Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However,
Autor:
Hee-Ok Kim, Jae-Eun Pi, Joo Yeon Kim, Won-Jae Lee, Jong-Heon Yang, Ha Kyun Lee, Jinwoong Kim, Yong-Hae Kim, Gi Heon Kim, Ji Hun Choi, MyungYu Kim, Chi-Sun Hwang
Publikováno v:
SID Symposium Digest of Technical Papers. 51:297-300
Autor:
Ji Hun Choi, Jae-Eun Pi, Jong-Heon Yang, Yong-Hae Kim, Gi HeonKim, Hee-Ok Kim, Won-Jae Lee, Joo Yeon Kim, Jinwoong Kim, Myungyu Kim, Kwang Ki Kim, Ha Kyun Lee, Chi-Sun Hwang
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).