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pro vyhledávání: '"Yoneichi Ogahara"'
Publikováno v:
Japanese Journal of Applied Physics. 35:2477
When applying high-density plasma to SiO2etching, the ability to control the degree of dissociation is critical. In this study, two methods for controlling the degree of dissociation were evaluated usingM=0 helicon wave plasma. One method was time-mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76b52b3774139ee368b6d6cb1678df3
https://doi.org/10.1143/jjap.35.2477
https://doi.org/10.1143/jjap.35.2477
Autor:
Nogami, Hiroshi, Nakagawa, Yukito, Mashimo, Kimiko, Yoneichi Ogahara, Yoneichi Ogahara, Tsutomu Tsukada, Tsutomu Tsukada
Publikováno v:
Japanese Journal of Applied Physics; April 1996, Vol. 35 Issue: 4 p2477-2477, 1p