Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Yoko Yoshimura"'
Autor:
Junichi Shimizu, Katsuhiro Masago, Haruhiro Saito, Kazumi Nishino, Takayasu Kurata, Yohji Itoh, Yoko Yoshimura, Yutaka Yabuki, Hirotoshi Dosaka-Akita
Publikováno v:
Therapeutic Advances in Medical Oncology, Vol 12 (2020)
Background: Molecular diagnostic testing is necessary to guide optimal first-line treatment. The number of patients who receive first-line treatment based on biomarker analysis in Japan is unknown. We aimed to determine the proportion of nonsquamous
Externí odkaz:
https://doaj.org/article/6d112c468256484ab90d13d14e14e562
Autor:
Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Reika Ichihara, Yusuke Higashi, Kunifumi Suzuki, Haruka Kusai, Yoko Yoshimura, Takamasa Hamai, Yuta Kamiya, Kota Takahashi, Kazuhiro Matsuo, Yasushi Nakasaki, Hidenori Miyagawa, Masamichi Suzuki, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Autor:
Reika Ichihara, Yusuke Higashi, Kunifumi Suzuki, Keisuke Takano, Yoko Yoshimura, Takamasa Hamai, Kota Takahashi, Kazuhiro Matsuo, Yasushi Nakasaki, Masamichi Suzuki, Yuuichi Kamimuta, Masumi Saitoh
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Autor:
Masumi Saitoh, Shosuke Fujii, Reika Ichihara, Yuichiro Mitani, Yoko Yoshimura, Marina Yamaguchi
Publikováno v:
IEEE Transactions on Electron Devices. 66:2165-2171
The degradation behavior of Ag/SiO2-based conductive bridging RAM (CBRAM) is analyzed by conventional and expanded time-dependent dielectric breakdown (TDDB) models. By comparing the total cycling stress with time-to-breakdown ( ${t}_{\text {bd}}$ )
Autor:
Hirotoshi Dosaka-Akita, Yohji Itoh, Yutaka Yabuki, Kazumi Nishino, Takayasu Kurata, Junichi Shimizu, Yoko Yoshimura, Haruhiro Saito, Katsuhiro Masago
Publikováno v:
Therapeutic Advances in Medical Oncology, Vol 12 (2020)
Therapeutic Advances in Medical Oncology
Therapeutic Advances in Medical Oncology
Background: Molecular diagnostic testing is necessary to guide optimal first-line treatment. The number of patients who receive first-line treatment based on biomarker analysis in Japan is unknown. We aimed to determine the proportion of nonsquamous
Autor:
Marina Yamaguchi, Harumi Seki, Yoko Yoshimura, Reika Ichihara, Takuya Konno, Shosuke Fujii, Dandan Zhao, Masumi Saitoh, Hiroki Tanaka, Masato Koyama
Publikováno v:
VLSI Circuits
We demonstrated a cross-point memory array composed of 40nm Ag ionic memory cell with sub- μ A and selectorless operation and 10-year data retention, making it a promising candidate for terabit-scale high-density memory application. Discontinuous co
Autor:
Dandan Zhao, Reika Ichihara, Yoko Yoshimura, Harumi Seki, Takuya Konno, Shosuke Fujii, Masato Koyama, Marina Yamaguchi, Masumi Saitoh, Hiroki Tanaka
Publikováno v:
2019 Symposium on VLSI Technology.
We demonstrated a cross-point memory array composed of 40nm Ag ionic memory cell with $\text{sub}-\mu \text{A}$ and selectorless operation and 10-year data retention, making it a promising candidate for terabit-scale high-density memory application.
Autor:
Takashi Nakayama, Shosuke Fujii, Kenji Shiraishi, Yoko Yoshimura, Marina Yamaguchi, Masaaki Araidai, Yoshihiro Asayama, Hiroki Shirakawa, Riki Nagasawa, Masumi Saitoh
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW).
We clarify the physical origin of excellent performance and reliability in AgW-alloy ionic memory. AgW-alloy ionic memory shows low operation current in sub- $\boldsymbol{\mu}\mathbf{A}$ range, good data retention and low operation voltage, which are
Autor:
Masumi Saitoh, Minoru Oda, Kensuke Ota, Yoko Yoshimura, Shoichi Kabuyanagi, Yuuichi Kamimuta, Marina Yamaguchi, Shosuke Fujii, Kiwamu Sakuma
Publikováno v:
ESSDERC
We present excellent performance of the two key devices in future 3D-LSI, HfO 2 ferroelectric tunnel junction (FTJ) memory and poly-Si nanowire transistors. HfO 2 FTJ has advantages such as CMOS compatibility, low operation current, self-compliance,