Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Yoko Tada"'
Publikováno v:
Review of Japanese Culture and Society, 1996 Dec 01. 8, 41-46.
Externí odkaz:
https://www.jstor.org/stable/42801193
Autor:
Masashiro Sugino, Toru Kuboi, Yuta Noguchi, Katsufumi Nishioka, Yoko Tadatomo, Nana Kawaguchi, Takaaki Sadamura, Akiko Nakano, Yukihiko Konishi, Kosuke Koyano, Shinji Nakamura, Hitoshi Okada, Susumu Itoh, Takashi Kusaka
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-6 (2023)
Abstract Therapeutic drug monitoring is generally unnecessary in caffeine treatment for apnea of prematurity, as serum caffeine concentrations in preterm infants are normally markedly lower than those at which caffeine intoxication occurs. However, s
Externí odkaz:
https://doaj.org/article/fccec56558ff429abf1216a259d73149
Publikováno v:
IEEE Transactions on Electron Devices. 55:1080-1084
We previously proposed a compact model of amorphous layer thickness over a wide range of ion implantation conditions using a vertical ion implantation profile parameter database. We also proposed a new parameter for the through dose. We extended the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e45b79c19f0941fb7b6ee4896e51a680
https://doi.org/10.1109/ted.2008.916714
https://doi.org/10.1109/ted.2008.916714
Autor:
Yuji Kataoka, Kunihiro Suzuki, T. Nagayama, C. Zechner, C.W. Magee, S. Nagayama, T.H. Buyuklimanli, K. Kawamura, Yoko Tada, Wolfgang Fichtner, D.C. Mueller
Publikováno v:
IEEE Transactions on Electron Devices. 54:1985-1993
In this paper, we showed that the maximum active P concentration of approximately 2 times1020 cm-3 exists during solid-phase epitaxial recrystallization (SPER). This maximum active concentration is close to the reported values for other active impuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa8e635731ce1f0fe23b02603677ee0c
https://doi.org/10.1109/ted.2007.901157
https://doi.org/10.1109/ted.2007.901157
Autor:
Yoko Tada
Publikováno v:
Historical English Studies in Japan. 2005:21-31
One of the teaching methods introduced in the Meiji era was the “Kaihatsu Kyoju Ho” methodology for developing the five senses. Hideo Takamine, as Head of Tokyo Teacher's School (Tokyo Shihan Gakko), contributed a lot to the introduction and prom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4767250f2b3c6b2cb2ae506600e0a14b
https://doi.org/10.5024/jeigakushi.2005.21
https://doi.org/10.5024/jeigakushi.2005.21
Publikováno v:
Applied Surface Science. :329-334
Shallow arsenic implantation distributions and narrowly spaced antimony delta markers in silicon were used to explore near-surface changes of the sputtering yield under ultra-low-energy Cs + bombardment (0.25-1 keV) at impact angles 0 between 0° (no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a4b1479b40bad3707407f13665ef695
https://doi.org/10.1016/s0169-4332(02)00670-0
https://doi.org/10.1016/s0169-4332(02)00670-0
Publikováno v:
Applied Surface Science. :43-47
Ripple formation on silicon due to oblique (ultra-)low-energy cesium bombardment was studied by measuring the degradation in depth resolution during sputter profiling of an antimony doped delta layer sample (six Sb deltas with an interlayer spacing o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b7a38932f5f852b39ecbe2174dc2a4c
https://doi.org/10.1016/s0169-4332(02)00650-5
https://doi.org/10.1016/s0169-4332(02)00650-5
Publikováno v:
IEEE Transactions on Electron Devices. 49:2031-2035
It has been found that P diffuses anomalously at low temperatures in heavily doped regions with doping concentration greater than 7/spl times/10/sup 20/ cm/sup -3/. Furthermore, it was found that the anomalous diffusion continues for a certain time p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::816261a31ea6440a350f0ad80a002186
https://doi.org/10.1109/ted.2002.804708
https://doi.org/10.1109/ted.2002.804708
Publikováno v:
IEEE Transactions on Electron Devices. 49:473-480
After discovering that the annealing-time dependence of the flatband voltage shifts of a p/sup +/-polysilicon gate MOS diode can be attributed to boron activation in polysilicon instead of boron penetration through gate M/sub 2/, we proposed a boron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc6c63f2de146251a99542a037b48fa
https://doi.org/10.1109/16.987119
https://doi.org/10.1109/16.987119
Publikováno v:
Journal of Applied Physics. 89:4570-4574
We demonstrated that ion-implantation damage in gate SiO2-enhanced boron penetration in p-channel metal–oxide–semiconductor devices, easily enhances boron diffusion in SiO2 by ten times or more. This article describes the effectiveness of using h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b408035941706f71196aa81c76c328ac
https://doi.org/10.1063/1.1356428
https://doi.org/10.1063/1.1356428