Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Yoji Akaki"'
Autor:
Ryuki Munekata, Tomohiro Uchimura, Hideaki Araki, Ayaka Kanai, Kunihiko Tanaka, Tomoichiro Okamoto, Yoji Akaki
Publikováno v:
Materials, Vol 16, Iss 18, p 6289 (2023)
Ag8SnS6 (ATS) has been reported to have a band gap of 1.33 eV and is expected to be a suitable material for the light-absorbing layers of compound thin-film solar cells. However, studies on solar cells that use ATS are currently lacking. The objectiv
Externí odkaz:
https://doaj.org/article/e627a2a396444050984f2d9f3f77c281
Autor:
Kunihiko Tanaka, Shogo Miyagi, Daiki Motai, Ryota Ohashi, Yoko Hosokawa, Kazuo Jimbo, Yoji Akaki, Hideaki Araki
Publikováno v:
Applied Physics A. 129
Autor:
Kunihiko Tanaka, Shogo Miyagi, Daiki Motai, Ryota Ohashi, Yoko Hosokawa, Kazuo Jimbo, Yoji Akaki, Hideaki Araki
Publikováno v:
SSRN Electronic Journal.
Autor:
Satoru Seto, Yoji Akaki, Toshiyuki Yamaguchi, Shigeyuki Nakamura, Masanobu Izaki, Junji Sasano, Koichi Hatayama, Mitsuki Nakashima, Hideaki Araki
Publikováno v:
Thin Solid Films. 642:8-13
In this paper, we fabricated thin films composed of (Cu,Ag)2SnS3 using a sulfurization process for photovoltaic devices. The stacked NaF / Sn / (Ag + Cu) precursor was deposited by sequential evaporation of Ag, Cu, and Sn elements and NaF followed by
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 12:920-924
Publikováno v:
physica status solidi c. 12:684-687
Cu(In,Ga)Se2 (CIGS) crystals were synthesized by a mechanochemical (MC) process using a crank ball mill. The molar ratios of starting materials were Cu:In:Ga:Se=1:1-x:x:2 (0≤x≤1) and Cu:In:Ga:Se=1:0.7:0.3:y (2≤y≤3). The reaction time reduced
Publikováno v:
physica status solidi c. 12:765-768
In this work, Cu-Sn-S thin films were prepared from a vacuum-evaporated Cu-Sn precursor via annealing in H2S from 200 to 500 °C for 1 h. Cu2SnS3 thin films with monoclinic and tetragonal structures were observed by X-ray diffraction when the anneali
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Sn and SnS thin films were deposited by thermal evaporation. The substrate temperature was from room temperature to 300 °C. After deposition, the thin films prepared at R.T. were annealed in a H2S atmosphere at temperature ranging from 100 to 500 °
Autor:
Mitsuki Nakashima, Masanobu Izaki, Yoji Akaki, Junji Sasano, Hideaki Araki, Hironori Katagiri, Toshiyuki Yamaguchi, Shun Hirano
Publikováno v:
physica status solidi (a). 216:1800870
Autor:
Hironori Katagiri, Panha Eang, Yoji Akaki, Hideaki Araki, Shigeyuki Nakamura, Satoru Seto, Toshiyuki Yamaguchi
Publikováno v:
physica status solidi (a). 216:1800872