Zobrazeno 1 - 10
of 440
pro vyhledávání: '"Yoichi Kawakami"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Multi-wavelength visible light emitters play a crucial role in current solid-state lighting. Although they can be realized by combining semiconductor light-emitting diodes (LEDs) and phosphors or by assembling multiple LED chips with differe
Externí odkaz:
https://doaj.org/article/1fc9c49fc8da4befaa37293ea02225c5
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125014-125014-5 (2020)
Temperature-dependent electroluminescence measurements are performed for 265-nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) grown on AlN substrates. The external quantum efficiency (EQE) increases as the temperature decreases from
Externí odkaz:
https://doaj.org/article/509d1ffc358340e6b0cdc39f513a95cd
Publikováno v:
APL Photonics, Vol 4, Iss 7, Pp 070801-070801-7 (2019)
Deep-ultraviolet (DUV) microscopy and microspectroscopy have received much attention in label-free live-cell imaging, selective molecular analysis, and optical characterizations of ultrawide bandgap materials. Far-field optics approaches usually suff
Externí odkaz:
https://doaj.org/article/bea7366b341641ddbf050f0a11c2aaa9
Publikováno v:
AIP Advances, Vol 5, Iss 11, Pp 117115-117115-6 (2015)
Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination proces
Externí odkaz:
https://doaj.org/article/d5d98263d1cd4d908fe141a7d6b8a761
Publikováno v:
Crystals, Vol 7, Iss 5, p 123 (2017)
The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after th
Externí odkaz:
https://doaj.org/article/71ee5cda5f4a4e85a8792ba067782973
Autor:
Takato Fukui, Yoshinobu Matsuda, Makoto Matsukura, Takahiro Kojima, Mitsuru Funato, Yoichi Kawakami
Publikováno v:
Crystal Growth & Design. 23:2739-2744
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Light-emitting diodes (LEDs) using InGaN/GaN quantum wells (QWs) have low emission efficiencies in the green wavelength region, a problem known as the “green gap”. Surface plasmon (SP)-enhanced LEDs have attracted considerable attention because o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdfb662cdac76cae6538ccc0756f446b
https://doi.org/10.21203/rs.3.rs-2515057/v1
https://doi.org/10.21203/rs.3.rs-2515057/v1
Autor:
Tomoaki Nambu, Taketo Yano, Soshi Umeda, Naoki Yokoyama, Hiroto Honda, Yasunori Tanaka, Yutaka Maegaki, Yusuke Mori, Masashi Yoshimura, Shuhei Kobayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Ryota Ishii, Yoichi Kawakami, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama
Publikováno v:
Optics express. 30(11)
A unique design of our ultracompact microcavity wavelength conversion device exploits the simple principle that the wavelength conversion efficiency is proportional to the square of the electric field amplitude of enhanced pump light in the microcavi
Publikováno v:
Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XX.