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pro vyhledávání: '"Yoichi Ashida"'
Publikováno v:
Microelectronic Engineering. 88:213-217
A solid-gate-insulator-less field-effect transistor, named metal-gas-semiconductor FET, MGSFET is proposed. This is aimed to avoid possible failures such as dielectric breakdown of the gate due to the gate insulator. A fundamental process sequence an
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2014, p31-34, 4p