Zobrazeno 1 - 10 of 10 pro vyhledávání: '"Yohei Otoki"'
1
Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing
Autor: Michal Bockowski, Kacper Sierakowski, Kensuke Sumida, Jun Suda, Kazufumi Hirukawa, Yohei Otoki, Hideki Sakurai, Masahiro Horita, Hajime Fujikura, Tetsu Kachi
Publikováno v: Applied Physics Express. 14:056501
Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N2 ambient pressure for 5 min at temperatures of 1573–1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a96b6ebb9bbd2bb022866c410f19bbf5
https://doi.org/10.35848/1882-0786/abf4f3
Zobrazit plný text záznamu
2
Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs
Autor: Wolfgang Jantz, Martin Kuball, Takeshi Tanaka, Andrew Souzis, Jiro Wada, Yohei Otoki, James W Pomeroy, Masaaki Kuzuhara, Maire Power
Publikováno v: physica status solidi (a). 212:1742-1745
The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro-thermometers and standard micro-Raman thermography were used to det
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b6edab724dfea5e01291ee123f8df84
https://doi.org/10.1002/pssa.201431788
Zobrazit plný text záznamu
3
Recent progress of high-quality GaN substrates by HVPE method
Autor: Takehiro Yoshida, Yohei Otoki, Masatomo Shibata, Hajime Fujikura
Publikováno v: SPIE Proceedings.
Recent progress in our hydride vapor-phase epitaxy (HVPE) technique is discussed. First, the void-assisted separation (VAS)-method for freestanding GaN fabrication is introduced and its recent progress is described. When conventional HVPE conditions
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a211f648810aca8670d753dd373b0a4
https://doi.org/10.1117/12.2257202
Zobrazit plný text záznamu
4
A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation
Autor: Yohei Otoki, Kenji Shiojima, Yutaka Tokuda, Takeshi Tanaka
Publikováno v: Thin Solid Films. 557:207-211
A study on defect states in relatively low-carbon doped GaN is presented. A large current collapse was observed in AlGaN/GaN high electron mobility transistor (HEMT) operation when the device channel was doped with carbon of 1 × 10 17 cm -3 . Deep l
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa87f1e1d4b530f8d8e437b3d0fd42b7
https://doi.org/10.1016/j.tsf.2013.10.077
Zobrazit plný text záznamu
5
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
Autor: Tsunenobu Kimoto, Yohei Otoki, Kazutaka Kanegae, Hajime Fujikura, Jun Suda, Takehiro Yoshida, Masahiro Horita, Taichiro Konno
Publikováno v: Applied Physics Letters. 115:012103
We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected. The dominant electron and hole traps observed in the QF-HVPE-grown GaN l
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::307d55f51b5027c4e751cf14ec88f33d
https://doi.org/10.1063/1.5098965
Zobrazit plný text záznamu
6
Leak current in high resistive GaN buffer layer and its light responsiveness
Autor: Tomoyoshi Mishima, Yohei Otoki, T. Yukimoto, H. Kamogawa, M. Sahara, Y. Moriya, Takeshi Tanaka
Publikováno v: physica status solidi c. 4:2585-2588
We observed unique light responsiveness in HR GaN leak current, in which the current was drastically reduced under LED illumination of 2.65 eV or lower photon energy. Free carrier excitation by the illumination and consequential electron capture into
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b43fc96d1aa10d338063df2fbac29ac
https://doi.org/10.1002/pssc.200674795
Zobrazit plný text záznamu
7
Compound Semiconductor Materials for Microwave Devises
Autor: Hiroyuki Kamogawa, Yohei Otoki
Publikováno v: IEEJ Transactions on Electronics, Information and Systems. 124:270-276
Mass production technology and new developments in Compound Semiconductor material for Microwave devices are here described. Semi-insulating GaAs was used for Microwave devices from the 1980s. Progress of Epi-taxial technology has enabled higher perf
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f4faa9df7463159ac263e150f277954
https://doi.org/10.1541/ieejeiss.124.270
Zobrazit plný text záznamu
10
Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs
Autor: Shoji Kuma, Tomoki Inada, Yohei Otoki, Shuichi Taharasako, Katsumi Ohata
Publikováno v: Journal of Crystal Growth. 96:327-332
The effects of the thermal history during the LEC growth of a semi-insulating GaAs crystal are discussed from the viewpoint of changes of the behavior of the excess arsenic dissolved in the GaAs crystal. Near the melting point, solid-solution of exce
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e319c12c4db6adad2fcefa1fb8297a38
https://doi.org/10.1016/0022-0248(89)90529-0
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje