Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Yohei Otani"'
Autor:
Elvira Bramon, Suzanne Reeves, Hiroyuki Uchida, Yohei Otani, Kathy Y. Liu, Kazunari Yoshida, Robert R. Bies, Bruce G. Pollock, Julie Bertrand, Mikail Ozer, Robert Howard
Publikováno v:
The British journal of psychiatry : the journal of mental science. 218(5)
BackgroundIn the treatment of psychosis, agitation and aggression in Alzheimer's disease, guidelines emphasise the need to ‘use the lowest possible dose’ of antipsychotic drugs, but provide no information on optimal dosing.AimsThis analysis inves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a4a2c039c52d346b8b765ecb1092b8a
https://pubmed.ncbi.nlm.nih.gov/33176899
https://pubmed.ncbi.nlm.nih.gov/33176899
Autor:
Mikail Ozer, Kathy Y. Liu, Hiroyuki Uchida, Yohei Otani, Robert R. Bies, Bruce G. Pollock, Elvira Bramon, Suzanne Reeves, Julie Bertrand, Robert Howard, Kazunari Yoshida
BackgroundIn the treatment of psychosis, agitation and aggression in Alzheimer’s disease (AD), guidelines emphasise the need to ‘use the lowest possible dose’ of antipsychotic drugs, but provide no information on optimal dosing.AimsThis analysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e77afefaad494505cc78de8068081a77
Autor:
Toshiro Ono, Yohei Otani, Tetsuya Sato, Hiroshi Okamoto, Yukio Fukuda, Junji Yamanaka, Daichi Yamada
Publikováno v:
ECS Meeting Abstracts. :937-937
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2560cd83420502e06e7dc595ffcc0760
https://doi.org/10.1149/ma2021-0230937mtgabs
https://doi.org/10.1149/ma2021-0230937mtgabs
Publikováno v:
Electronics and Communications in Japan. 98:8-15
SUMMARY Ge-MIS structures have attracted attention as next-generation CMOS devices. We have reported that a GeNx/Ge structure with a low interface state density can be made by the electron cyclotron resonance (ECR) plasma technique, and that the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4cf3701dd328c08a6f068ab38281b2e
https://doi.org/10.1002/ecj.11655
https://doi.org/10.1002/ecj.11655
Publikováno v:
SICE Journal of Control, Measurement, and System Integration. 7:147-151
Temperature measurements of liquid pig iron coming out of a blast furnace are essential for estimating the thermal condition in the hearth. The temperature is generally monitored by a disposable th...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e18a6d00f41f9b27d1e2b3ee4580084
https://doi.org/10.9746/jcmsi.7.147
https://doi.org/10.9746/jcmsi.7.147
Autor:
Yohei Otani, Hiroshi Okamoto, Shinya Sato, Hidehumi Narita, Yukio Fukuda, Takuro Iwasaki, Toshiro Ono
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 133:1481-1484
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::911be7094c4890afd320c1463848d00d
https://doi.org/10.1541/ieejeiss.133.1481
https://doi.org/10.1541/ieejeiss.133.1481
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 133:1279-1284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32ce7f7518b256cd8443390b12988714
https://doi.org/10.1541/ieejeiss.133.1279
https://doi.org/10.1541/ieejeiss.133.1279
Publikováno v:
Integrated Ferroelectrics. 84:129-135
High quality PLZT ((Pb, La)(Zr, Ti)O3) thin films were deposited on r-plane sapphire substrates using sol-gel method. The solution concentration affected a film quality a lot and less than 10 wt% concentration is needed for high quality depositions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73632f4b38163d06ae46afd896742d69
https://doi.org/10.1080/10584580601085453
https://doi.org/10.1080/10584580601085453
Publikováno v:
Integrated Ferroelectrics. 81:261-270
Ferroelectric PZT thin films were deposited by liquid delivery MOCVD using a cocktail solution of Pb(DMAMP)2, Zr(MMP)4 and Ti(MMP)4 with ECH. This cocktail solution was stable at least 3 months and perfectly vaporized above 290°C. Deposited films we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a619d58807ce45f4f3cb340fe2fb40
https://doi.org/10.1080/10584580600663326
https://doi.org/10.1080/10584580600663326
Publikováno v:
Japanese Journal of Applied Physics. 45:1752-1756
Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films were fabricated on platinized silicon substrates by liquid delivery metalorganic chemical vapor deposition (MOCVD) using Pb(DPM)2, Zr(DIBM)4 and Ti(OEt)2(DPM)2, and subsequent post annealing. Approximately 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9e8582b62fb57244e53837802413d2
https://doi.org/10.1143/jjap.45.1752
https://doi.org/10.1143/jjap.45.1752