Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yohann Solaro"'
Publikováno v:
2022 44th Annual EOS/ESD Symposium (EOS/ESD).
Autor:
Sorin Cristoloveanu, C. Fenouillet-Beranger, Philippe Ferrari, Yohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
We propose and demonstrate experimentally a band-modulation device with extremely sharp switching capability. The Z 3 -FET (Zero gate, Zero swing and Zero impact ionization) has no top gate, is processed with FDSOI CMOS technology, and makes use of t
Autor:
Charles-Alex Legrand, Philippe Ferrari, D. Marin-Cudraz, Sorin Cristoloveanu, Yohann Solaro, Hassan El Dirani, Pascal Fonteneau
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2017, 128, pp.180-186. ⟨10.1016/j.sse.2016.10.008⟩
Solid-State Electronics, Elsevier, 2017, 128, pp.180-186. ⟨10.1016/j.sse.2016.10.008⟩
International audience; A band-modulation device with a free top surface, named Z3-FET (Zero front-gate, Zero swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted Silicon-On-Insulator technology, is demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d70f12ffbb0127dde4b01e0af45a52f
https://hal.archives-ouvertes.fr/hal-02003239
https://hal.archives-ouvertes.fr/hal-02003239
Autor:
Sorin Cristoloveanu, Pascal Fonteneau, Hassan El Dirani, Yohann Solaro, Philippe Ferrari, Dominique Golanski, Charles-Alex Legrand, D. Marin-Cudraz
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2016, 125, pp.103-110. ⟨10.1016/j.sse.2016.07.018⟩
Solid-State Electronics, Elsevier, 2016, 125, pp.103-110. ⟨10.1016/j.sse.2016.07.018⟩
International audience; A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75d9da66d0b06600ce7280ca509f39a5
https://hal.archives-ouvertes.fr/hal-02003135
https://hal.archives-ouvertes.fr/hal-02003135
Publikováno v:
2016 ESSDERC Proceedings
2016 ESSDERC-46th European Solid-State Device Research Conference
2016 ESSDERC-46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.210-213, ⟨10.1109/ESSDERC.2016.7599623⟩
ESSDERC
2016 ESSDERC-46th European Solid-State Device Research Conference
2016 ESSDERC-46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.210-213, ⟨10.1109/ESSDERC.2016.7599623⟩
ESSDERC
session A5L-C: Novel Devices; International audience; A novel sharp switching Z 2 -FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e556a1be92f77eb0082d293dd8b93ca0
https://hal.archives-ouvertes.fr/hal-02006273
https://hal.archives-ouvertes.fr/hal-02006273
Autor:
Sorin Cristoloveanu, Yohann Solaro, H. El Dirani, P. Ferrari, D. Marin-Cudraz, Charles-Alexandre Legrand, Dominique Golanski, Pascal Fonteneau
Publikováno v:
2016 EUROSOI-ULIS Proceedings
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.131-134, ⟨10.1109/ULIS.2016.7440070⟩
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.131-134, ⟨10.1109/ULIS.2016.7440070⟩
session 9: Advanced Devices ad Three-Dimensional Integration; International audience; A systematic study of a novel band modulation device (Z3-FET: Zero gate, Zero swing slope and Zero impact ionization) fabricated in most advanced Fully Depleted Sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ec7bbf904c8a6c8ea5ea92a089edf3e
https://hal.archives-ouvertes.fr/hal-02006226
https://hal.archives-ouvertes.fr/hal-02006226
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2016, 115, pp.201-206. ⟨10.1016/j.sse.2015.08.015⟩
Solid-State Electronics, Elsevier, 2016, 115, pp.201-206. ⟨10.1016/j.sse.2015.08.015⟩
International audience; This paper presents a systematic study of Z2-FET (Zero Subthreshold Swing and Zero Impact Ionization transistor) fabricated in advanced Fully Depleted Silicon On Insulator (FDSOI) 28 nm technology with Ultra-Thin Body and Buri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e0d5c8051d7133dc4b9bf9dd567686d
https://hal.archives-ouvertes.fr/hal-02003188
https://hal.archives-ouvertes.fr/hal-02003188
Publikováno v:
ESSDERC
Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried
Autor:
Yohann Solaro, Pascal Fonteneau, Claire Fenouillet-Beranger, D. Marin-Cudraz, Charles-Alexandre Legrand
Publikováno v:
2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
For the first time, we demonstrate an innovative way to build ESD protection in FDSOI technologies. This protection is comprised of two stacked devices one on the other: a bottom bulk-thyristor and a top thin film triggering device. Low leakage curre
Autor:
Pascal Fonteneau, S. Cristoloveneau, Yohann Solaro, H. El Dirani, Philippe Ferrari, L. Onestas
Publikováno v:
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.
The Z2-FET (Zero Impact Ionization and Subthreshold Slope FET), a recent sharp switching device with zero subthreshold swing and zero impact ionization, is considered for Electro-Static Discharge (ESD) protection of Fully Depleted SOI (FDSOI) circuit