Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yohanan Avitan"'
Autor:
Aaron Cordes, Vasiliki Tileli, Ram Peltinov, Konstantin Chirko, Benjamin Bunday, Mayaan Bar-Zvi, Daniel Bellido Aguilar, Bradley L. Thiel, Ofer Adan, John A. Allgair, Yohanan Avitan
Publikováno v:
SPIE Proceedings.
For many years, lithographic resolution has been the main obstacle in keeping the pace of transistor densification to meet Moore's Law. For the 32 nm node and beyond, new lithography techniques will be used, including immersion ArF (iArF) lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04f5cc2a4d84c1d43b2de864106d34e7
https://doi.org/10.1117/12.846991
https://doi.org/10.1117/12.846991
Autor:
Aaron Cordes, Eric Cottrell, Benjamin Bunday, Ram Peltinov, Sean Hand, John A. Allgair, Yohanan Avitan, Maayan Bar-Zvi, Ofer Adan, Vasiliki Tileli
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
For many years, lithographic resolution has been the main obstacle in keeping the pace of transistor densification to meet Moore's Law. For the 45 nm node and beyond, new lithography techniques are being considered, including immersion ArF (iArF) lit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8affb4c50af509218e062f0ee0c1698
https://doi.org/10.1117/12.816249
https://doi.org/10.1117/12.816249
Autor:
Ram Peltinov, Bryan J. Rice, Benjamin Bunday, Maayan Bar-Zvi, Emil Piscani, Dan Cochran, John A. Allgair, Aaron Cordes, Ofer Adan, Ndubuisi G. Orji, Yohanan Avitan, Jeff D. Byers
Publikováno v:
SPIE Proceedings.
For many years, lithographic resolution has been the main obstacle for keeping the pace of transistor densification to meet Moore's Law. For the 45 nm node and beyond, new lithography techniques are being considered, including immersion ArF lithograp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3b8e354b8646db50486e154d0b860e
https://doi.org/10.1117/12.774317
https://doi.org/10.1117/12.774317
Autor:
John A. Allgair, Ram Peltinov, Yohanan Avitan, Bryan J. Rice, John R. Swyers, Jeff D. Byers, Ofer Adan, Benjamin Bunday, Roni Z. Shneck, Maayan Bar-Zvi
Publikováno v:
SPIE Proceedings.
For many years, lithographic resolution has been the main obstacle for keeping the pace of transistor densification to meet Moore's Law. The industry standard lithographic wavelength has evolved many times, from G-line to I-line, deep ultraviolet (DU
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee44e4c521e06d91f2dc5a86182f7c8b
https://doi.org/10.1117/12.714203
https://doi.org/10.1117/12.714203