Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Yoh Ichi Yamaguchi"'
Publikováno v:
Sensors and Actuators A: Physical. 54:695-699
Polycrystalline and single-crystalline 3C silicon carbide films hetero-epitaxially grown on 3′' or 4′' Si wafers have been obtained by a hotwall type low-pressure chemical-vapour deposition (LPCVD). The internal stress of the polycrystalline film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3666237238c75261b5bf9a8ca46556
https://doi.org/10.1016/s0924-4247(97)80040-4
https://doi.org/10.1016/s0924-4247(97)80040-4
Autor:
Natsuo Fukumoto, Yoh-ichi Yamaguchi, Toshiyuki Fujimoto, Masahiro Orita, Hiroyuki Sakai, Megumi Takeuchi, Isao Kojima
Publikováno v:
Hyomen Kagaku. 17:440-446
The relationship between the electronic structures of ITO thin films and their optical and electric properties has been investigated by using X-ray photoelectron spectroscopy (XPS) and bremsstrahlung Isochromat spectroscopy (BIS). The spectra of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18a02ec0cfb76a5cd652fcfbb37b16b5
https://doi.org/10.1380/jsssj.17.440
https://doi.org/10.1380/jsssj.17.440
Autor:
Yoh-ichi Yamaguchi, Hiroyuki Nagasawa
Publikováno v:
Applied Surface Science. :405-409
Heteroepitaxial growth of 3C-SiC on Si(001) substrate has been realized by the use of a hot-wall type LPCVD with an alternating supply of acetylene (C 2 H 2 ) and dichlorosilane (SiH 2 Cl 2 ) in the temperature range 1000–1050°C. By synchronizing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d28e720d436c667c1a555f230abff4
https://doi.org/10.1016/0169-4332(94)90249-6
https://doi.org/10.1016/0169-4332(94)90249-6
Publikováno v:
Applied Surface Science. :542-545
The heteroepitaxial growth of 3C-SiC on Si substrates has been studied in a hot-wall type LPCVD reactor with an alternating supply of SiH2Cl2 and C2H2 in the temperature range of 750 to 1050°C. Silicon carbide films have been grown only at temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d65b656b30b0cf6d28216fb6b104a34a
https://doi.org/10.1016/0169-4332(93)90577-x
https://doi.org/10.1016/0169-4332(93)90577-x
Publikováno v:
Microelectronic Engineering. 17:181-184
We have systematically investigated the mechanical distortion of SiC x-ray mask substrate by changing the internal stress of as-deposited SiC film, the thickness of wafer, glass materials (Pyrex, SD-1 and SD-2) and the thickness of glass frame. Using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b669c24ea6200eb04800bf398eeaa6d9
https://doi.org/10.1016/0167-9317(92)90037-r
https://doi.org/10.1016/0167-9317(92)90037-r
Autor:
Hiroyuki Nagasawa, Yoh-ichi Yamaguchi
Publikováno v:
Journal of Crystal Growth. 115:612-616
A carbonized layer on a Si substrate was formed with hot-wall type LPCVD. The Si substrate was heated up to 1020 ° C at various C2H2 partial pressures from 1.0 to 18 mTorr. A lot of etch pits and hillocks were observed on the carbonized substrate at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f0097c3a59758f688d7bf35749bd47
https://doi.org/10.1016/0022-0248(91)90813-k
https://doi.org/10.1016/0022-0248(91)90813-k
Publikováno v:
Microelectronic Engineering. 11:237-240
We have developed an excellent silicon carbide mask membrane with a hot wall type LPCVD using a SiH 2 Cl 2 - C 2 H 2 - H 2 reaction gas system. The internal stress can be precisely controlled by making a mixed crystal of poly β-SiC and poly Si. Surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adc057aa8bdae20cea635ec5c5d8207e
https://doi.org/10.1016/0167-9317(90)90105-3
https://doi.org/10.1016/0167-9317(90)90105-3
Autor:
Isao Amemiya, Tsutomu Shoki, Norimichi Annaka, Osamu Nagarekawa, Yoh-ichi Yamaguchi, Hiroyuki Kosuga, Hiroyuki Nagasawa
Publikováno v:
MRS Proceedings. 306
Many properties of LPCVD SiC film as X-ray mask membrane have been investigated in detail. The film has an atomic ratio of 1.0 and negligible impurities, and was found to be damage-free to SR X-rays up to 500 KJ/cm2. An integrated transparency of 1.0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7746a4a77b28ad8a2925864acb2f9e89
https://doi.org/10.1557/proc-306-197
https://doi.org/10.1557/proc-306-197
Autor:
Yoh Ichi Yamaguchi, Shuichi Noda, Kazuo Suzuki, Yoshio Yamashita, Takuya Yoshihara, Takao Taguchi, Soichiro Mitsui, Tadashi Matsuo, Tsutomu Shoki, Tsuneaki Ohta, Shinji Tsuboi, Hiroshi Hoga, Katsumi Suzuki
Publikováno v:
Japanese Journal of Applied Physics. 35:2845
The influence of resist and absorber stress distributions on X-ray mask distortion induced during back-etching preceding subtractive fabrication is analyzed experimentally and simulated. The stress distribution (gradient) in a resist and/or that in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c0b9c1272932d3eb6fc7f9da9629bf
https://doi.org/10.1143/jjap.35.2845
https://doi.org/10.1143/jjap.35.2845
Autor:
Yoh-ichi Yamaguchi, Franco Cerrina, H. Kosuga, Ryo Ohkubo, N. Annaka, Kuniaki Yamazaki, Tsutomu Shoki, G. M. Wells
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3995
The effect of antireflection (AR) coating on optical transparency for SiC membrane and the accelerated radiation damage of thicker AR film of 0.4 μm in thickness on a 2‐μm‐thick SiC membrane have been investigated in detail using SiO2, Al2O3, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2dac538ba95513de6c1aecfe570fcf
https://doi.org/10.1116/1.587417
https://doi.org/10.1116/1.587417