Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Yoh, Kanji"'
We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both nonlocal
Externí odkaz:
http://arxiv.org/abs/1304.1671
We have investigated the realizability of the controlled-NOT (CNOT) gate and characterized the gate operation by quantum process tomography for a chain of qubits, realized by electrons confined in self-assembled quantum dots embedded in the spin fiel
Externí odkaz:
http://arxiv.org/abs/1203.6737
Publikováno v:
Phys. Rev. B 79 (2009) 075318
As a possible physical realization of a quantum information processor, a system with stacked self-assembled InAs quantum dots buried in GaAs in adjacent to the channel of a spin field-effect transistor has been proposed. In this system, only one of t
Externí odkaz:
http://arxiv.org/abs/0806.1032
Autor:
Ohno, Munekazu, Yoh, Kanji
It is revealed that in spin helix state of (001) quantum well system, strong suppression of D'yakonov-Perel' spin relaxation process occurs by an interplay between Rashba and Dresselhaus couplings over a wide range of Rashba coupling strength. Contra
Externí odkaz:
http://arxiv.org/abs/0706.3557
Autor:
Ferhat, Marhoun, Yoh, Kanji
Publikováno v:
Applied Physics Letters Vol.90, No.11, pp112501(2007)
Single Crystalline Fe3-deltaO4 (0<=delta<=0.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions in-situ real time reflection high-energy electro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610697
Autor:
Ohno, Hiroshi, Yoh, Kanji, Sueoka, Kazuhisa, Mukasa, Koichi, Kawaharazuka, Atsushi, Ramsteiner, Manfred E.
Publikováno v:
Jpn. J. Appl. Phys. Pt.2 Vol.40, No.2A, pp.L87-L89 (2003)
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured
Externí odkaz:
http://arxiv.org/abs/cond-mat/0301109
Autor:
Matsuda, Takashi, Yoh, Kanji
Publikováno v:
In Journal of Crystal Growth 15 May 2011 323(1):52-55
Autor:
Babu, J. Bubesh, Yoh, Kanji
Publikováno v:
In Journal of Crystal Growth 15 May 2011 323(1):301-303
Autor:
Konishi, Keita, Yoh, Kanji
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2010 42(10):2792-2795