Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yodyunyong, A."'
Autor:
K.A. Münzer, A. Yodyunyong, Andreas Teppe, P. Fath, R.E. Schlosser, Johannes Maier, M. Hein, J. Schöne, Steffen Keller, M. Hanke, S. Krümberg
Publikováno v:
Energy Procedia. 27:631-637
Currently leading crystalline solar cell technologies comprehend rear side passivation with local aluminium back surface field and dielectric reflection layer. For this purpose Centrotherm developed the centaurus technology, which is based on a rear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d01f332b5f5ba5544bc7b04c67ec3c8
Autor:
Sinje Keipert-Colberg, Markus Rinio, Dietmar Borchert, Arthit Yodyunyong, A. Montesdeoca-Santana, Yves Patrick Botchak Mouafi
Publikováno v:
Progress in Photovoltaics: Research and Applications. 19:165-169
The influence of an annealing step at about 500 degree celsius after emitter diffusion of multicrystalline solar cells is investigated. Neighboring wafers from a silicon ingot were processed using ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c552df60bb119c54102389c58027082d
https://doi.org/10.1002/pip.1002
https://doi.org/10.1002/pip.1002
Autor:
Münzer, K.A., Schöne, J., Hanke, M., Hein, M., Teppe, A., Maier, J., Schlosser, R.E., Yodyunyong, A., Varner, K., Habenicht, H., Frieß, T., Winter, P., Keller, S., Fath, P.
27th European Photovoltaic Solar Energy Conference and Exhibition; 666-671
Rear side passivation with local aluminium back surface field and dielectric reflection layer are upcoming technologies in crystalline solar cell production. For this pur
Rear side passivation with local aluminium back surface field and dielectric reflection layer are upcoming technologies in crystalline solar cell production. For this pur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e0ffcba02d4e626fc20c3d7cd954065
Autor:
Rinio, M., Yodyunyong, A., Keipert-Colberg, S., Botchak Mouafi, Y.P., Borchert, D., Montesdeoca-Santana, A.
The influence of an annealing step at about 500°C after emitter diffusion of multicrystalline solar cells is investigated. Neighboring wafers from a silicon ingot were processed using different annealing durations and temperatures. The efficiency of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::92fc549e51149f4e5f3c9f94c0911b4c
https://publica.fraunhofer.de/handle/publica/224286
https://publica.fraunhofer.de/handle/publica/224286
Autor:
Münzer, K.A., Schöne, J., Teppe, A., Hein, M., Schlosser, R.E., Hanke, M., Maier, J., Yodyunyong, A., Isenberg, J., Frieß, T., Ehling, C., Varner, K., Keller, S., Fath, P.
26th European Photovoltaic Solar Energy Conference and Exhibition; 843-848
With the goal of 19.5 % solar cell efficiency the development of solar cells with rear side passivation and local contacts in combination with laser diffused selective em
With the goal of 19.5 % solar cell efficiency the development of solar cells with rear side passivation and local contacts in combination with laser diffused selective em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f6357af70af6322b9c73da1ef1b84dc
Autor:
Rinio, M., Yodyunyong, A., Pirker, M., Zhang, C., Günther, D., Botchak Mouafi, P., Keipert-Colberg, S., Borchert, D., Heuer, M., Montesdeoca-Santana, A.
24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 1816-1819
It was previously shown, that an additional low temperature (LT) anneal directly after phosphorus diffusion improves the efficiency of multicry
It was previously shown, that an additional low temperature (LT) anneal directly after phosphorus diffusion improves the efficiency of multicry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2342332a8b31cd5bbb803868504f5be
Autor:
Rinio, M., Yodyunyong, A., Pirker, M., Keipert-Colberg, S., Wang, P., Buonassisi, T., Borchert, D.
23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1014-1017
The influence of an annealing step at about 500 °C after emitter diffusion on multicrystalline ingot cast silicon solar cells is i
The influence of an annealing step at about 500 °C after emitter diffusion on multicrystalline ingot cast silicon solar cells is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ede56c061213e0fb9c16337370f8ec2
Akademický článek
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Akademický článek
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Autor:
Rinio, Markus, Yodyunyong, Arthit, Keipert-Colberg, Sinje, Borchert, Dietmar, Montesdeoca-Santana, Amada
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; May2011, Vol. 208 Issue 5, p1208-1208, 1p